X-ray photoelectron spectroscopy depth profile of chemically modified porous silicon

A. Jasper Nijdam, Mark Ming Cheng Cheng, Mauro Ferrari

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A study of a short x-ray photoelectron spectroscopy (XPS) to verify if surface modifications actually penetrate into the porous silicon, were presented. The porous silicon surfaces were prepared by electrochemical etching in a homemade Teflon cell. The depth profile of the samples was performed on a Kratos Axis Ultra, with a monochromated A1 Kα x-ray gun using a concentric hemispherical analyzer. The results of the XPS depth profiling show that APTES and polyethylene glycol (PEG) chemically modified porous silicon were applied to the inner surface of the pores and not only on the outer surface.

Original languageEnglish (US)
Pages (from-to)852-854
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number2
DOIs
StatePublished - Mar 2006

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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