Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip

P. A. Porta, H. D. Summers

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The vertical-cavity semiconductor devices with monolithically integrated detectors were investigated for the excitation and detection of fluorescence emission from a fluorophore. These devices were found to be capable to act as excitation sources in forward bias and as detectors in reverse bias mode. A resonant cavity light-emitting diode (RCLED) with an undoped GaAs layer for optical detection was realized to study the characteristics of this device. The results reveal the suitability of these devices for fluorescence spectroscopy as they provide an excitation signal and can detect the redshifted dye fluorescence.

Original languageEnglish (US)
Pages (from-to)1889-1891
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number11
DOIs
StatePublished - Sep 13 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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