Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip

P. A. Porta; H. D. Summers

doi:10.1063/1.1787153

Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip

P. A. Porta, H. D. Summers

Houston Methodist

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The vertical-cavity semiconductor devices with monolithically integrated detectors were investigated for the excitation and detection of fluorescence emission from a fluorophore. These devices were found to be capable to act as excitation sources in forward bias and as detectors in reverse bias mode. A resonant cavity light-emitting diode (RCLED) with an undoped GaAs layer for optical detection was realized to study the characteristics of this device. The results reveal the suitability of these devices for fluorescence spectroscopy as they provide an excitation signal and can detect the redshifted dye fluorescence.

Original language	English (US)
Pages (from-to)	1889-1891
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1787153
State	Published - Sep 13 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1787153

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title = "Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip",

abstract = "The vertical-cavity semiconductor devices with monolithically integrated detectors were investigated for the excitation and detection of fluorescence emission from a fluorophore. These devices were found to be capable to act as excitation sources in forward bias and as detectors in reverse bias mode. A resonant cavity light-emitting diode (RCLED) with an undoped GaAs layer for optical detection was realized to study the characteristics of this device. The results reveal the suitability of these devices for fluorescence spectroscopy as they provide an excitation signal and can detect the redshifted dye fluorescence.",

author = "Porta, {P. A.} and Summers, {H. D.}",

note = "Funding Information: The authors wish to acknowledge IQE Ldt. for the wafer growth and the Engineering and Physical Science Research Council (EPSRC) for the financial support of this work. They also thank Rob Tucker for useful discussions. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2004",

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doi = "10.1063/1.1787153",

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AU - Summers, H. D.

N1 - Funding Information: The authors wish to acknowledge IQE Ldt. for the wafer growth and the Engineering and Physical Science Research Council (EPSRC) for the financial support of this work. They also thank Rob Tucker for useful discussions. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/9/13

Y1 - 2004/9/13

N2 - The vertical-cavity semiconductor devices with monolithically integrated detectors were investigated for the excitation and detection of fluorescence emission from a fluorophore. These devices were found to be capable to act as excitation sources in forward bias and as detectors in reverse bias mode. A resonant cavity light-emitting diode (RCLED) with an undoped GaAs layer for optical detection was realized to study the characteristics of this device. The results reveal the suitability of these devices for fluorescence spectroscopy as they provide an excitation signal and can detect the redshifted dye fluorescence.

AB - The vertical-cavity semiconductor devices with monolithically integrated detectors were investigated for the excitation and detection of fluorescence emission from a fluorophore. These devices were found to be capable to act as excitation sources in forward bias and as detectors in reverse bias mode. A resonant cavity light-emitting diode (RCLED) with an undoped GaAs layer for optical detection was realized to study the characteristics of this device. The results reveal the suitability of these devices for fluorescence spectroscopy as they provide an excitation signal and can detect the redshifted dye fluorescence.

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Vertical-cavity semiconductor devices for generation and detection of fluorescence emission on a single chip

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