Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage

Keyphrases

• Ultra-narrow 100%
• Low-energy Ions 100%
• Ion Damage 100%
• 2-dimensional Electron Gas (2DEG) 100%
• Conducting Channels 100%
• GaAs-AlGaAs 100%
• Conducting Wires 66%
• Electron Beam Lithography 33%
• Gallium Arsenide 33%
• Quantum Hall Effect 33%
• Aharonov-Bohm Oscillations 33%
• Underlying Materials 33%
• Pattern-based Approach 33%
• Ar Ions 33%
• Etching Damage 33%
• Cl2 Gas 33%
• Carrier Mobility 33%
• Channel Geometry 33%
• Ion Etching 33%
• Sidewall 33%
• Carrier Density 33%
• Capping Layer 33%
• Ion Beam Assisted 33%
• Depletion Length 33%

Engineering

• Aluminium Gallium Arsenide 100%
• Gallium Arsenide 100%
• Two-Dimensional Electron Gas 100%
• One Dimensional 33%
• Electron Optical Lithography 33%
• Channel Geometry 33%
• Patterning Technique 33%
• Carrier Mobility 33%
• Carrier Concentration 33%
• Cap Layer 33%
• Side Wall 33%

Material Science

• GaAs/AlGaAs 100%
• Lithography 50%
• Gallium Arsenide 50%
• Carrier Mobility 50%
• Carrier Concentration 50%