Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces

Alberto Pimpinelli, Robert Cadoret, Evelyne Gil-Lafon, Jérôme Napierala, Agnès Trassoudaine

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


A generalization of the model of Burton, Cabrera and Frank of step flow epitaxial growth on vicinal surfaces in multi-component systems is presented. In particular, the present model addresses chemical vapour epitaxial growth, where the atomic or molecular species composing the crystal, or growth units, are carried to the substrate inside more complex molecules, or precursors, as well as molecular beam epitaxial growth of compound semiconductors. Surface diffusion, chemical reactions, and incorporation at steps are included in the model, that allows for an analytic computation of the growth rate. Special attention is paid to the delicate problem of boundary conditions at steps in a two-component system.

Original languageEnglish (US)
Pages (from-to)1-13
Number of pages13
JournalJournal of Crystal Growth
Issue number1-2
StatePublished - Oct 2003


  • A1. Adsorption
  • A1. Desorption
  • A1. Diffusion
  • A1. Growth models
  • A3. Hydride vapour phase epitaxy
  • A3. Metalorganic vapor phase epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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