Transfer printing of CVD graphene FETs on patterned substrates

T. S. Abhilash, R. De Alba, N. Zhelev, H. G. Craighead, J. M. Parpia

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA-cleaning step to improve the surface quality. In contrast to conventional fabrication routes where lithographic steps are performed after the transfer, here graphene is transferred to a pre-patterned substrate. The resulting FET devices display nearly zero Dirac voltage, and the contact resistance between the graphene and metal contacts is on the order of 910 ± 340 Ω μm. This approach enables formation of conducting graphene channel lengths up to one millimeter. The resist-free transfer process provides a clean graphene surface that is promising for use in high sensitivity graphene FET biosensors.

Original languageEnglish (US)
Pages (from-to)14109-14113
Number of pages5
JournalNanoscale
Volume7
Issue number33
DOIs
StatePublished - Sep 7 2015

ASJC Scopus subject areas

  • Materials Science(all)

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