Titanium nitride coated tungsten cold field emission sources

W. K. Lo; G. Parthasarathy; C. W. Lo; D. M. Tanenbaum; H. G. Craighead; M. S. Isaacson

doi:10.1116/1.588668

Titanium nitride coated tungsten cold field emission sources

W. K. Lo, G. Parthasarathy, C. W. Lo, D. M. Tanenbaum, H. G. Craighead, M. S. Isaacson

Houston Methodist

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Titanium nitride (TiN) thin film coatings were studied by field emission microscopy and spectroscopy. Coated tungsten tips were found to be capable of emitting extremely high currents at low extraction voltages (∼1 mA at 900-1700 V). Current fluctuations for >400 μA total emission from a single tip were 7% rms, measured over ∼ 1 h. Electron energy distributions measured <0.4 eV (full width at half-maximum). Since TiN thin films are commonly used in the microelectronics industry, TiN coatings have the potential for being a relatively simple and widely accessible method for improving the performance of cold field emission sources.

Original language	English (US)
Pages (from-to)	3787-3791
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	14
Issue number	6
DOIs	https://doi.org/10.1116/1.588668
State	Published - 1996

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Titanium nitride coated tungsten cold field emission sources",

abstract = "Titanium nitride (TiN) thin film coatings were studied by field emission microscopy and spectroscopy. Coated tungsten tips were found to be capable of emitting extremely high currents at low extraction voltages (∼1 mA at 900-1700 V). Current fluctuations for >400 μA total emission from a single tip were 7% rms, measured over ∼ 1 h. Electron energy distributions measured <0.4 eV (full width at half-maximum). Since TiN thin films are commonly used in the microelectronics industry, TiN coatings have the potential for being a relatively simple and widely accessible method for improving the performance of cold field emission sources.",

author = "Lo, {W. K.} and G. Parthasarathy and Lo, {C. W.} and Tanenbaum, {D. M.} and Craighead, {H. G.} and Isaacson, {M. S.}",

year = "1996",

doi = "10.1116/1.588668",

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T1 - Titanium nitride coated tungsten cold field emission sources

AU - Lo, W. K.

AU - Parthasarathy, G.

AU - Lo, C. W.

AU - Tanenbaum, D. M.

AU - Craighead, H. G.

AU - Isaacson, M. S.

PY - 1996

Y1 - 1996

N2 - Titanium nitride (TiN) thin film coatings were studied by field emission microscopy and spectroscopy. Coated tungsten tips were found to be capable of emitting extremely high currents at low extraction voltages (∼1 mA at 900-1700 V). Current fluctuations for >400 μA total emission from a single tip were 7% rms, measured over ∼ 1 h. Electron energy distributions measured <0.4 eV (full width at half-maximum). Since TiN thin films are commonly used in the microelectronics industry, TiN coatings have the potential for being a relatively simple and widely accessible method for improving the performance of cold field emission sources.

AB - Titanium nitride (TiN) thin film coatings were studied by field emission microscopy and spectroscopy. Coated tungsten tips were found to be capable of emitting extremely high currents at low extraction voltages (∼1 mA at 900-1700 V). Current fluctuations for >400 μA total emission from a single tip were 7% rms, measured over ∼ 1 h. Electron energy distributions measured <0.4 eV (full width at half-maximum). Since TiN thin films are commonly used in the microelectronics industry, TiN coatings have the potential for being a relatively simple and widely accessible method for improving the performance of cold field emission sources.

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Titanium nitride coated tungsten cold field emission sources

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