Threshold Current of 670-nm AlGalnP Strained Quantum Well Lasers

P. M. Smowton; H. D. Summers; P. Rees; P. Blood

doi:10.1109/68.313049

Threshold Current of 670-nm AlGalnP Strained Quantum Well Lasers

P. M. Smowton, H. D. Summers, P. Rees, P. Blood

Houston Methodist

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5 Scopus citations

Abstract

By means of gain-current calculations we have examined the factors which determine the threshold current of compressively strained Ga_xIn_1-xP/AlGaInP quantum well lasers for the various well width/composition (x) combinations which give a transition wavelength of 670 nm. In addition to valence band modifications we find that the increasing depth and decreasing width of the well are important in decreasing the current as the strain increases. We reveal the important role of well width fluctuations in devices with high compressive strain.

Original language	English (US)
Pages (from-to)	910-912
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	6
Issue number	8
DOIs	https://doi.org/10.1109/68.313049
State	Published - Aug 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.313049

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abstract = "By means of gain-current calculations we have examined the factors which determine the threshold current of compressively strained GaxIn1-xP/AlGaInP quantum well lasers for the various well width/composition (x) combinations which give a transition wavelength of 670 nm. In addition to valence band modifications we find that the increasing depth and decreasing width of the well are important in decreasing the current as the strain increases. We reveal the important role of well width fluctuations in devices with high compressive strain.",

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year = "1994",

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AU - Rees, P.

AU - Blood, P.

PY - 1994/8

Y1 - 1994/8

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AB - By means of gain-current calculations we have examined the factors which determine the threshold current of compressively strained GaxIn1-xP/AlGaInP quantum well lasers for the various well width/composition (x) combinations which give a transition wavelength of 670 nm. In addition to valence band modifications we find that the increasing depth and decreasing width of the well are important in decreasing the current as the strain increases. We reveal the important role of well width fluctuations in devices with high compressive strain.

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Threshold Current of 670-nm AlGalnP Strained Quantum Well Lasers

Abstract

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