Threshold Current of 670-nm AlGalnP Strained Quantum Well Lasers

P. M. Smowton, H. D. Summers, P. Rees, P. Blood

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

By means of gain-current calculations we have examined the factors which determine the threshold current of compressively strained GaxIn1-xP/AlGaInP quantum well lasers for the various well width/composition (x) combinations which give a transition wavelength of 670 nm. In addition to valence band modifications we find that the increasing depth and decreasing width of the well are important in decreasing the current as the strain increases. We reveal the important role of well width fluctuations in devices with high compressive strain.

Original languageEnglish (US)
Pages (from-to)910-912
Number of pages3
JournalIEEE Photonics Technology Letters
Volume6
Issue number8
DOIs
StatePublished - Aug 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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