Abstract
The development of a segmented-contact, single pass method for measuring optical gain in semiconducting quantum well structures was reported. The relation between spontaneous emission and gain spectra of excited semiconductor systems was used explicitly to derive the spontaneous emission current. The modal gain and spontaneous emission spectra for the structures were measured, and the implications of low photon energies and low temperature effects were considered for the calculations of the material system.
| Original language | English |
|---|---|
| Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
| Pages | 7-8 |
| Number of pages | 2 |
| State | Published - Oct 8 2001 |
| Event | Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: May 6 2001 → May 11 2001 |
Other
| Other | Conference on Lasers and Electro-Optics (CLEO) |
|---|---|
| Country/Territory | United States |
| City | Baltimore, MD |
| Period | 5/6/01 → 5/11/01 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering