The spontaneous emission and optical gain spectra from an InGaAs quantum dot laser have been independently measured under the same operating conditions. Using these spectra a combined probability-distribution function describing the electron occupancy in the conduction and valence bands has been experimentally determined. Comparison of this function with theoretical curves based on Fermi-Dirac statistics shows that for temperatures down to 100 K the carrier occupancy statistics are accurately described by thermal distributions. Measurements at 70 K show a breakdown of thermodynamic equilibrium indicated by non-thermal carrier distributions.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry