Abstract
The spontaneous emission and optical gain spectra from an InGaAs quantum dot laser have been independently measured under the same operating conditions. Using these spectra a combined probability-distribution function describing the electron occupancy in the conduction and valence bands has been experimentally determined. Comparison of this function with theoretical curves based on Fermi-Dirac statistics shows that for temperatures down to 100 K the carrier occupancy statistics are accurately described by thermal distributions. Measurements at 70 K show a breakdown of thermodynamic equilibrium indicated by non-thermal carrier distributions.
Original language | English (US) |
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Pages (from-to) | 140-143 |
Number of pages | 4 |
Journal | Semiconductor Science and Technology |
Volume | 16 |
Issue number | 3 |
DOIs | |
State | Published - Mar 1 2001 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry