Abstract
Using a single mode rate equation model, the authors have investigated the dynamics of Q-switching in a quantum-dot laser diode including a calculation of the dot energy levels and the gain and absorption in the structure. The effects of the random variation of dot size and density in the structure on the Q-switching performance are elucidated. It is seen that the considerable gain saturation associated with quantum-dot lasers results in excellent Q-switchng characteristics.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 152-158 |
| Number of pages | 7 |
| Journal | IEE Proceedings: Optoelectronics |
| Volume | 150 |
| Issue number | 2 |
| DOIs | |
| State | Published - Apr 1 2003 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Computer Networks and Communications
- Electrical and Electronic Engineering
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