Abstract
Using a single mode rate equation model, the authors have investigated the dynamics of Q-switching in a quantum-dot laser diode including a calculation of the dot energy levels and the gain and absorption in the structure. The effects of the random variation of dot size and density in the structure on the Q-switching performance are elucidated. It is seen that the considerable gain saturation associated with quantum-dot lasers results in excellent Q-switchng characteristics.
Original language | English (US) |
---|---|
Pages (from-to) | 152-158 |
Number of pages | 7 |
Journal | IEE Proceedings: Optoelectronics |
Volume | 150 |
Issue number | 2 |
DOIs | |
State | Published - Apr 1 2003 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Computer Networks and Communications
- Electrical and Electronic Engineering