Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laser diodes

D. R. Jones; P. Rees; I. Pierce; H. D. Summers

doi:10.1109/2944.788445

Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laser diodes

D. R. Jones, P. Rees, I. Pierce, H. D. Summers

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Self-pulsating laser diodes operating at a wavelength of 650 nm are attractive for high-density optical storage. The main candidate for such a device is an AlGaInP laser diode including an epitaxially integrated saturable absorber. The characteristic self-pulsation occurs due to the interplay between gain in the active region and the absorption within the structure. In this paper, we calculate the dynamics of self-pulsation in this type of AlGaInP laser diode, including a detailed description of gain and absorption within the relative sections. In particular, we identify how, by modifying the structure of the epitaxial absorber layers, we can alter the operating characteristics of these laser diodes.

Original language	English (US)
Pages (from-to)	740-744
Number of pages	5
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	5
Issue number	3
DOIs	https://doi.org/10.1109/2944.788445
State	Published - May 1999

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laser diodes",

abstract = "Self-pulsating laser diodes operating at a wavelength of 650 nm are attractive for high-density optical storage. The main candidate for such a device is an AlGaInP laser diode including an epitaxially integrated saturable absorber. The characteristic self-pulsation occurs due to the interplay between gain in the active region and the absorption within the structure. In this paper, we calculate the dynamics of self-pulsation in this type of AlGaInP laser diode, including a detailed description of gain and absorption within the relative sections. In particular, we identify how, by modifying the structure of the epitaxial absorber layers, we can alter the operating characteristics of these laser diodes.",

author = "Jones, {D. R.} and P. Rees and I. Pierce and Summers, {H. D.}",

note = "Funding Information: Manuscript received December 1, 1998; revised April 2, 1999. The work of I. Pierce was supported by the Engineering and Physical Sciences Research Council, U.K., under Grant GR/L69459. D. R. Jones, P. Rees, and I. Pierce are with the School of Electrical Engineering and Computer Systems, University of Wales Bangor, Bangor, LL57 1UT, U.K. H. D. Summers is with the Department of Physics and Astronomy, University of Wales Cardiff, Cardiff, CF2 3YB, U.K. Publisher Item Identifier S 1077-260X(99)06126-2. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.",

year = "1999",

month = may,

doi = "10.1109/2944.788445",

language = "English (US)",

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pages = "740--744",

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AU - Jones, D. R.

AU - Rees, P.

AU - Pierce, I.

AU - Summers, H. D.

N1 - Funding Information: Manuscript received December 1, 1998; revised April 2, 1999. The work of I. Pierce was supported by the Engineering and Physical Sciences Research Council, U.K., under Grant GR/L69459. D. R. Jones, P. Rees, and I. Pierce are with the School of Electrical Engineering and Computer Systems, University of Wales Bangor, Bangor, LL57 1UT, U.K. H. D. Summers is with the Department of Physics and Astronomy, University of Wales Cardiff, Cardiff, CF2 3YB, U.K. Publisher Item Identifier S 1077-260X(99)06126-2. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

PY - 1999/5

Y1 - 1999/5

N2 - Self-pulsating laser diodes operating at a wavelength of 650 nm are attractive for high-density optical storage. The main candidate for such a device is an AlGaInP laser diode including an epitaxially integrated saturable absorber. The characteristic self-pulsation occurs due to the interplay between gain in the active region and the absorption within the structure. In this paper, we calculate the dynamics of self-pulsation in this type of AlGaInP laser diode, including a detailed description of gain and absorption within the relative sections. In particular, we identify how, by modifying the structure of the epitaxial absorber layers, we can alter the operating characteristics of these laser diodes.

AB - Self-pulsating laser diodes operating at a wavelength of 650 nm are attractive for high-density optical storage. The main candidate for such a device is an AlGaInP laser diode including an epitaxially integrated saturable absorber. The characteristic self-pulsation occurs due to the interplay between gain in the active region and the absorption within the structure. In this paper, we calculate the dynamics of self-pulsation in this type of AlGaInP laser diode, including a detailed description of gain and absorption within the relative sections. In particular, we identify how, by modifying the structure of the epitaxial absorber layers, we can alter the operating characteristics of these laser diodes.

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Theoretical optimization of self-pulsating 650-nm-wavelength AlGaInP laser diodes

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