Self-pulsating laser diodes operating at a wavelength of 650 nm are attractive for high-density optical storage. The main candidate for such a device is an AlGaInP laser diode including an epitaxially integrated saturable absorber. The characteristic self-pulsation occurs due to the interplay between gain in the active region and the absorption within the structure. In this paper, we calculate the dynamics of self-pulsation in this type of AlGaInP laser diode, including a detailed description of gain and absorption within the relative sections. In particular, we identify how, by modifying the structure of the epitaxial absorber layers, we can alter the operating characteristics of these laser diodes.
|Original language||English (US)|
|Number of pages||5|
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|State||Published - May 1999|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering