Theoretical investigation of InGaN self-pulsating laser diodes for optical storage applications

D. R. Jones, Paul Rees, I. Pierce

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Self-pulsating laser diodes operating at 420nm are required in high-density optical storage devices. By growing saturable absorbing quantum wells in the p-doped cladding layer, of a semiconductor laser, it is possible to obtain the interplay between gain and absorption, which is required for pulsation. The dynamics of self-pulsating InGaN laser diodes are investigated to gain an insight into how the quantum-well configuration in the absorber and the cavity length affect the laser output. In particular, the work shows how a carefully designed structure gives rise to stable self-pulsation up to a temperature of 100°C while offering high powered emission at low operating currents. As a result, such blue-emitting laser diodes are highly desirable for use within next-generation optical storage devices.

Original languageEnglish (US)
Pages (from-to)330-337
Number of pages8
JournalIEE Proceedings: Optoelectronics
Volume153
Issue number6
DOIs
StatePublished - Nov 29 2006

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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