Abstract
Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Distributed Bragg microcavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130 K there is an enhancement. These changes to the spontaneous emission process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the microcavity on the field-dipole interaction.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Pages | 229-240 |
| Number of pages | 12 |
| Volume | 3283 |
| DOIs | |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Physics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States Duration: Jan 26 1998 → Jan 26 1998 |
Other
| Other | Physics and Simulation of Optoelectronic Devices VI |
|---|---|
| Country/Territory | United States |
| City | San Jose, CA |
| Period | 1/26/98 → 1/26/98 |
Keywords
- Band-edge enhancement
- Edge-emitting lasers
- Microcavities
- Spontaneous emission
- VCSEL
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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