Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures

Graham M. Berry; Gareth D. Lewis; Huw D. Summers; Peter Blood; John S. Roberts

doi:10.1117/12.316687

Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures

Graham M. Berry, Gareth D. Lewis, Huw D. Summers, Peter Blood, John S. Roberts

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Distributed Bragg microcavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130 K there is an enhancement. These changes to the spontaneous emission process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the microcavity on the field-dipole interaction.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	229-240
Number of pages	12
Volume	3283
DOIs	https://doi.org/10.1117/12.316687
State	Published - 1998
Externally published	Yes
Event	Physics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States Duration: Jan 26 1998 → Jan 26 1998

Other

Other	Physics and Simulation of Optoelectronic Devices VI
Country/Territory	United States
City	San Jose, CA
Period	1/26/98 → 1/26/98

Keywords

Band-edge enhancement
Edge-emitting lasers
Microcavities
Spontaneous emission
VCSEL

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.316687

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Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures. / Berry, Graham M.; Lewis, Gareth D.; Summers, Huw D. et al.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3283 1998. p. 229-240.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Berry, GM, Lewis, GD, Summers, HD, Blood, P & Roberts, JS 1998, Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3283, pp. 229-240, Physics and Simulation of Optoelectronic Devices VI, San Jose, CA, United States, 1/26/98. https://doi.org/10.1117/12.316687

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keywords = "Band-edge enhancement, Edge-emitting lasers, Microcavities, Spontaneous emission, VCSEL",

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year = "1998",

doi = "10.1117/12.316687",

language = "English (US)",

volume = "3283",

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AU - Blood, Peter

AU - Roberts, John S.

PY - 1998

Y1 - 1998

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AB - Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Distributed Bragg microcavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130 K there is an enhancement. These changes to the spontaneous emission process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the microcavity on the field-dipole interaction.

KW - Band-edge enhancement

KW - Edge-emitting lasers

KW - Microcavities

KW - Spontaneous emission

KW - VCSEL

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BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics and Simulation of Optoelectronic Devices VI

Y2 - 26 January 1998 through 26 January 1998

ER -

Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures

Abstract

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Keywords

ASJC Scopus subject areas

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