Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures

Graham M. Berry, Gareth D. Lewis, Huw D. Summers, Peter Blood, John S. Roberts

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Distributed Bragg microcavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130 K there is an enhancement. These changes to the spontaneous emission process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the microcavity on the field-dipole interaction.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages229-240
Number of pages12
Volume3283
DOIs
StatePublished - 1998
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States
Duration: Jan 26 1998Jan 26 1998

Other

OtherPhysics and Simulation of Optoelectronic Devices VI
CountryUnited States
CitySan Jose, CA
Period1/26/981/26/98

Keywords

  • Band-edge enhancement
  • Edge-emitting lasers
  • Microcavities
  • Spontaneous emission
  • VCSEL

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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