The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers

P. Rees, P. Blood, M. J H Vanhommerig, G. J. Davies, P. J. Skevington

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The temperature dependence of the threshold current of 1.65 μm In0.53Ga0.47As-InP bulk lasers grown by chemical beam epitaxy has been investigated. By comparison with a theoretical estimate of the spontaneous recombination current at threshold, the temperature dependence of the loss mechanisms in these lasers is determined. The CBE laser structures were grown in a VG V80 MBE system converted to take BT designed group-III metal alkyl and group-V hybrid sources.

Original languageEnglish (US)
Pages (from-to)1804-1807
Number of pages4
JournalJournal of Applied Physics
Volume78
Issue number3
DOIs
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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