The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers

P. Rees; P. Blood; M. J H Vanhommerig; G. J. Davies; P. J. Skevington

doi:10.1063/1.360212

The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers

P. Rees, P. Blood, M. J H Vanhommerig, G. J. Davies, P. J. Skevington

Houston Methodist

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The temperature dependence of the threshold current of 1.65 μm In_0.53Ga_0.47As-InP bulk lasers grown by chemical beam epitaxy has been investigated. By comparison with a theoretical estimate of the spontaneous recombination current at threshold, the temperature dependence of the loss mechanisms in these lasers is determined. The CBE laser structures were grown in a VG V80 MBE system converted to take BT designed group-III metal alkyl and group-V hybrid sources.

Original language	English (US)
Pages (from-to)	1804-1807
Number of pages	4
Journal	Journal of Applied Physics
Volume	78
Issue number	3
DOIs	https://doi.org/10.1063/1.360212
State	Published - 1995

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.360212

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title = "The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers",

abstract = "The temperature dependence of the threshold current of 1.65 μm In0.53Ga0.47As-InP bulk lasers grown by chemical beam epitaxy has been investigated. By comparison with a theoretical estimate of the spontaneous recombination current at threshold, the temperature dependence of the loss mechanisms in these lasers is determined. The CBE laser structures were grown in a VG V80 MBE system converted to take BT designed group-III metal alkyl and group-V hybrid sources.",

author = "P. Rees and P. Blood and Vanhommerig, {M. J H} and Davies, {G. J.} and Skevington, {P. J.}",

year = "1995",

doi = "10.1063/1.360212",

language = "English (US)",

volume = "78",

pages = "1804--1807",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers

AU - Rees, P.

AU - Blood, P.

AU - Vanhommerig, M. J H

AU - Davies, G. J.

AU - Skevington, P. J.

PY - 1995

Y1 - 1995

N2 - The temperature dependence of the threshold current of 1.65 μm In0.53Ga0.47As-InP bulk lasers grown by chemical beam epitaxy has been investigated. By comparison with a theoretical estimate of the spontaneous recombination current at threshold, the temperature dependence of the loss mechanisms in these lasers is determined. The CBE laser structures were grown in a VG V80 MBE system converted to take BT designed group-III metal alkyl and group-V hybrid sources.

AB - The temperature dependence of the threshold current of 1.65 μm In0.53Ga0.47As-InP bulk lasers grown by chemical beam epitaxy has been investigated. By comparison with a theoretical estimate of the spontaneous recombination current at threshold, the temperature dependence of the loss mechanisms in these lasers is determined. The CBE laser structures were grown in a VG V80 MBE system converted to take BT designed group-III metal alkyl and group-V hybrid sources.

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U2 - 10.1063/1.360212

DO - 10.1063/1.360212

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers

Abstract

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