The temperature dependence of the threshold current of 1.65 μm In0.53Ga0.47As-InP bulk lasers grown by chemical beam epitaxy has been investigated. By comparison with a theoretical estimate of the spontaneous recombination current at threshold, the temperature dependence of the loss mechanisms in these lasers is determined. The CBE laser structures were grown in a VG V80 MBE system converted to take BT designed group-III metal alkyl and group-V hybrid sources.
ASJC Scopus subject areas
- Physics and Astronomy(all)