Textured thin-film Si solar selective absorbers using reactive ion etching

H. G. Craighead; R. E. Howard; D. M. Tennant

doi:10.1063/1.92015

Textured thin-film Si solar selective absorbers using reactive ion etching

H. G. Craighead, R. E. Howard, D. M. Tennant

Houston Methodist

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Solar selective surface photothermal absorbers consisting of thin-film Si with a submicron surface texture have been produced by reactive ion etching an evaporated Si film on a Mo layer. Such surfaces formed on 316 stainless steel and other substrates have solar absorptivities of 0.9 and calculated thermal emissivities of ∼0.2 at 200°C. These selective surfaces are stable in air to 500°C.

Original language	English (US)
Pages (from-to)	653-655
Number of pages	3
Journal	Applied Physics Letters
Volume	37
Issue number	7
DOIs	https://doi.org/10.1063/1.92015
State	Published - 1980

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.92015

Cite this

@article{31c13e43f7ec4f7c8bb920bb62e6cc59,

title = "Textured thin-film Si solar selective absorbers using reactive ion etching",

abstract = "Solar selective surface photothermal absorbers consisting of thin-film Si with a submicron surface texture have been produced by reactive ion etching an evaporated Si film on a Mo layer. Such surfaces formed on 316 stainless steel and other substrates have solar absorptivities of 0.9 and calculated thermal emissivities of ∼0.2 at 200°C. These selective surfaces are stable in air to 500°C.",

author = "Craighead, \{H. G.\} and Howard, \{R. E.\} and Tennant, \{D. M.\}",

year = "1980",

doi = "10.1063/1.92015",

language = "English (US)",

volume = "37",

pages = "653--655",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Textured thin-film Si solar selective absorbers using reactive ion etching

AU - Craighead, H. G.

AU - Howard, R. E.

AU - Tennant, D. M.

PY - 1980

Y1 - 1980

N2 - Solar selective surface photothermal absorbers consisting of thin-film Si with a submicron surface texture have been produced by reactive ion etching an evaporated Si film on a Mo layer. Such surfaces formed on 316 stainless steel and other substrates have solar absorptivities of 0.9 and calculated thermal emissivities of ∼0.2 at 200°C. These selective surfaces are stable in air to 500°C.

AB - Solar selective surface photothermal absorbers consisting of thin-film Si with a submicron surface texture have been produced by reactive ion etching an evaporated Si film on a Mo layer. Such surfaces formed on 316 stainless steel and other substrates have solar absorptivities of 0.9 and calculated thermal emissivities of ∼0.2 at 200°C. These selective surfaces are stable in air to 500°C.

UR - https://www.scopus.com/pages/publications/0004754067

UR - https://www.scopus.com/inward/citedby.url?scp=0004754067&partnerID=8YFLogxK

U2 - 10.1063/1.92015

DO - 10.1063/1.92015

M3 - Article

AN - SCOPUS:0004754067

SN - 0003-6951

VL - 37

SP - 653

EP - 655

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Textured thin-film Si solar selective absorbers using reactive ion etching

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this