Textured thin-film Si solar selective absorbers using reactive ion etching

H. G. Craighead; R. E. Howard; D. M. Tennant

doi:10.1063/1.92015

Textured thin-film Si solar selective absorbers using reactive ion etching

H. G. Craighead, R. E. Howard, D. M. Tennant

Research output: Contribution to journal › Article › peer-review

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Abstract

Solar selective surface photothermal absorbers consisting of thin-film Si with a submicron surface texture have been produced by reactive ion etching an evaporated Si film on a Mo layer. Such surfaces formed on 316 stainless steel and other substrates have solar absorptivities of 0.9 and calculated thermal emissivities of ∼0.2 at 200°C. These selective surfaces are stable in air to 500°C.

Original language	English (US)
Pages (from-to)	653-655
Number of pages	3
Journal	Applied Physics Letters
Volume	37
Issue number	7
DOIs	https://doi.org/10.1063/1.92015
State	Published - 1980

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.92015

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title = "Textured thin-film Si solar selective absorbers using reactive ion etching",

abstract = "Solar selective surface photothermal absorbers consisting of thin-film Si with a submicron surface texture have been produced by reactive ion etching an evaporated Si film on a Mo layer. Such surfaces formed on 316 stainless steel and other substrates have solar absorptivities of 0.9 and calculated thermal emissivities of ∼0.2 at 200°C. These selective surfaces are stable in air to 500°C.",

author = "Craighead, {H. G.} and Howard, {R. E.} and Tennant, {D. M.}",

year = "1980",

doi = "10.1063/1.92015",

language = "English (US)",

volume = "37",

pages = "653--655",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

number = "7",

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T1 - Textured thin-film Si solar selective absorbers using reactive ion etching

AU - Craighead, H. G.

AU - Howard, R. E.

AU - Tennant, D. M.

PY - 1980

Y1 - 1980

N2 - Solar selective surface photothermal absorbers consisting of thin-film Si with a submicron surface texture have been produced by reactive ion etching an evaporated Si film on a Mo layer. Such surfaces formed on 316 stainless steel and other substrates have solar absorptivities of 0.9 and calculated thermal emissivities of ∼0.2 at 200°C. These selective surfaces are stable in air to 500°C.

AB - Solar selective surface photothermal absorbers consisting of thin-film Si with a submicron surface texture have been produced by reactive ion etching an evaporated Si film on a Mo layer. Such surfaces formed on 316 stainless steel and other substrates have solar absorptivities of 0.9 and calculated thermal emissivities of ∼0.2 at 200°C. These selective surfaces are stable in air to 500°C.

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U2 - 10.1063/1.92015

DO - 10.1063/1.92015

M3 - Article

AN - SCOPUS:0004754067

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -

Textured thin-film Si solar selective absorbers using reactive ion etching

Abstract

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