Temperature-dependent nucleation and capture-zone scaling of C60 on silicon oxide

M. A. Groce, B. R. Conrad, W. G. Cullen, A. Pimpinelli, E. D. Williams, T. L. Einstein

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Submonolayer films of C60 have been deposited on ultrathin SiO2 films for the purpose of characterizing the initial stages of nucleation and growth as a function of temperature. Capture zones extracted from the initial film morphology were analyzed using both the gamma and generalized Wigner distributions. The calculated critical nucleus size i of the C 60 islands was observed to change over the temperature range 298 K to 483 K. All fitted values of i were found to be between 0 and 1, representing stable monomers and stable dimers, respectively. With increasing temperature of film preparation, we observed i first increasing through this range and then decreasing. We discuss possible explanations of this reentrant-like behavior.

Original languageEnglish (US)
Pages (from-to)53-56
Number of pages4
JournalSurface Science
Volume606
Issue number1-2
DOIs
StatePublished - Jan 2012

Keywords

  • Capture-zone distributions
  • Critical nucleus size
  • Fullerenes
  • Models of non-equilibrium phenomena: nucleation and growth
  • Scanning tunneling microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Temperature-dependent nucleation and capture-zone scaling of C<sub>60</sub> on silicon oxide'. Together they form a unique fingerprint.

Cite this