Temperature-dependent nucleation and capture-zone scaling of C60 on silicon oxide

M. A. Groce, B. R. Conrad, W. G. Cullen, A. Pimpinelli, E. D. Williams, T. L. Einstein

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Submonolayer films of C60 have been deposited on ultrathin SiO2 films for the purpose of characterizing the initial stages of nucleation and growth as a function of temperature. Capture zones extracted from the initial film morphology were analyzed using both the gamma and generalized Wigner distributions. The calculated critical nucleus size i of the C 60 islands was observed to change over the temperature range 298 K to 483 K. All fitted values of i were found to be between 0 and 1, representing stable monomers and stable dimers, respectively. With increasing temperature of film preparation, we observed i first increasing through this range and then decreasing. We discuss possible explanations of this reentrant-like behavior.

Original languageEnglish (US)
Pages (from-to)53-56
Number of pages4
JournalSurface Science
Volume606
Issue number1-2
DOIs
StatePublished - Jan 2012

Keywords

  • Capture-zone distributions
  • Critical nucleus size
  • Fullerenes
  • Models of non-equilibrium phenomena: nucleation and growth
  • Scanning tunneling microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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