Temperature-dependent internal friction in silicon nanoelectromechanical systems

S. Evoy; A. Olkhovets; L. Sekaric; J. M. Parpia; H. G. Craighead; D. W. Carr

doi:10.1063/1.1316071

Temperature-dependent internal friction in silicon nanoelectromechanical systems

S. Evoy, A. Olkhovets, L. Sekaric, J. M. Parpia, H. G. Craighead, D. W. Carr

Research output: Contribution to journal › Article › peer-review

95 Scopus citations

Abstract

We report the temperature-dependent mechanical properties of nanofabricated silicon resonators operating in the megahertz range. Reduction of temperature leads to an increase of the resonant frequencies of up to 6.5%. Quality factors as high as 1000 and 2500 are observed at room temperature in metallized and nonmetallized devices, respectively. Although device metallization increases the overall level of dissipation, internal friction peaks are observed in all devices in the T= 160-180 K range.

Original language	English (US)
Pages (from-to)	2397-2399
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	15
DOIs	https://doi.org/10.1063/1.1316071
State	Published - Oct 9 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1316071

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AU - Evoy, S.

AU - Olkhovets, A.

AU - Sekaric, L.

AU - Parpia, J. M.

AU - Craighead, H. G.

AU - Carr, D. W.

PY - 2000/10/9

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N2 - We report the temperature-dependent mechanical properties of nanofabricated silicon resonators operating in the megahertz range. Reduction of temperature leads to an increase of the resonant frequencies of up to 6.5%. Quality factors as high as 1000 and 2500 are observed at room temperature in metallized and nonmetallized devices, respectively. Although device metallization increases the overall level of dissipation, internal friction peaks are observed in all devices in the T= 160-180 K range.

AB - We report the temperature-dependent mechanical properties of nanofabricated silicon resonators operating in the megahertz range. Reduction of temperature leads to an increase of the resonant frequencies of up to 6.5%. Quality factors as high as 1000 and 2500 are observed at room temperature in metallized and nonmetallized devices, respectively. Although device metallization increases the overall level of dissipation, internal friction peaks are observed in all devices in the T= 160-180 K range.

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Temperature-dependent internal friction in silicon nanoelectromechanical systems

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