Temperature dependence of the wavelength of quantum dot lasers

John Thomson; Huw Summers; Peter Smowton; Eugen Herrmann; Peter Blood; Mark Hopkinson

Temperature dependence of the wavelength of quantum dot lasers

John Thomson, Huw Summers, Peter Smowton, Eugen Herrmann, Peter Blood, Mark Hopkinson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 angstroms wide in a waveguide core region of Al _0.15Ga _0.85As with cladding layers of Al _0.6Ga _0.4As were studied. Measurements were made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. All measurements were made under pulsed conditions.

Original language	English (US)
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	135-136
Number of pages	2
State	Published - 2000

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

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title = "Temperature dependence of the wavelength of quantum dot lasers",

abstract = "The properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 angstroms wide in a waveguide core region of Al 0.15Ga 0.85As with cladding layers of Al 0.6Ga 0.4As were studied. Measurements were made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. All measurements were made under pulsed conditions. ",

author = "John Thomson and Huw Summers and Peter Smowton and Eugen Herrmann and Peter Blood and Mark Hopkinson",

year = "2000",

language = "English (US)",

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booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Temperature dependence of the wavelength of quantum dot lasers

AU - Thomson, John

AU - Summers, Huw

AU - Smowton, Peter

AU - Herrmann, Eugen

AU - Blood, Peter

AU - Hopkinson, Mark

PY - 2000

Y1 - 2000

N2 - The properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 angstroms wide in a waveguide core region of Al 0.15Ga 0.85As with cladding layers of Al 0.6Ga 0.4As were studied. Measurements were made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. All measurements were made under pulsed conditions.

AB - The properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 angstroms wide in a waveguide core region of Al 0.15Ga 0.85As with cladding layers of Al 0.6Ga 0.4As were studied. Measurements were made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. All measurements were made under pulsed conditions.

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M3 - Conference contribution

AN - SCOPUS:0034471231

SP - 135

EP - 136

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Temperature dependence of the wavelength of quantum dot lasers

Abstract

ASJC Scopus subject areas

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