Temperature dependence of the wavelength of quantum dot lasers

John Thomson, Huw Summers, Peter Smowton, Eugen Herrmann, Peter Blood, Mark Hopkinson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The properties of quantum dot lasers comprising a single layer of InGaAs dots set in a single GaAs quantum well 100 angstroms wide in a waveguide core region of Al 0.15Ga 0.85As with cladding layers of Al 0.6Ga 0.4As were studied. Measurements were made of the optical absorption, optical mode loss and gain spectra as a function of temperature by single pass technique using a device with a segmented contact. All measurements were made under pulsed conditions.

Original languageEnglish (US)
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages135-136
Number of pages2
StatePublished - 2000

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Temperature dependence of the wavelength of quantum dot lasers'. Together they form a unique fingerprint.

Cite this