Synthesis of germanium nanocrystals in SiO2

J. G. Couillard, H. G. Craighead

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Germanium nanocrystals in SiO2 with an average diameter of 5-25 nm were fabricated by co-deposition and annealing at 700-1000°C. X-ray diffraction and transmission electron microscopy were used to measure the nanocrystal growth as a function of anneal time and temperature. The precipitation of nanocrystals was found not to follow the theory for precipitation from a solid solution of Lifshitz-Slezov; nanocrystal growth appears instead to be determined primarily by anneal temperature with little anneal time dependence. This departure from theory is attributed to the high concentration (40 at%) of germanium in the deposited films. A modified log-normal distribution was found to describe the distribution of nanocrystal sizes best. Photoluminescence was observed from nanocrystal-containing films, with luminescence energy shifted from that of bulk germanium. The luminescence spectra are in agreement with the theory of Brus for quantum confined carriers in small semiconductor crystals.

Original languageEnglish (US)
Pages (from-to)5665-5669
Number of pages5
JournalJournal of Materials Science
Issue number23
StatePublished - 1998

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Science (miscellaneous)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Polymers and Plastics


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