Synthesis of germanium nanocrystals in SiO2

J. G. Couillard; H. G. Craighead

doi:10.1023/A:1004436820179

Synthesis of germanium nanocrystals in SiO₂

J. G. Couillard, H. G. Craighead

Houston Methodist

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Germanium nanocrystals in SiO₂ with an average diameter of 5-25 nm were fabricated by co-deposition and annealing at 700-1000°C. X-ray diffraction and transmission electron microscopy were used to measure the nanocrystal growth as a function of anneal time and temperature. The precipitation of nanocrystals was found not to follow the theory for precipitation from a solid solution of Lifshitz-Slezov; nanocrystal growth appears instead to be determined primarily by anneal temperature with little anneal time dependence. This departure from theory is attributed to the high concentration (40 at%) of germanium in the deposited films. A modified log-normal distribution was found to describe the distribution of nanocrystal sizes best. Photoluminescence was observed from nanocrystal-containing films, with luminescence energy shifted from that of bulk germanium. The luminescence spectra are in agreement with the theory of Brus for quantum confined carriers in small semiconductor crystals.

Original language	English (US)
Pages (from-to)	5665-5669
Number of pages	5
Journal	Journal of Materials Science
Volume	33
Issue number	23
DOIs	https://doi.org/10.1023/A:1004436820179
State	Published - 1998

ASJC Scopus subject areas

Ceramics and Composites
Materials Science (miscellaneous)
General Materials Science
Mechanics of Materials
Mechanical Engineering
Polymers and Plastics

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title = "Synthesis of germanium nanocrystals in SiO2",

abstract = "Germanium nanocrystals in SiO2 with an average diameter of 5-25 nm were fabricated by co-deposition and annealing at 700-1000°C. X-ray diffraction and transmission electron microscopy were used to measure the nanocrystal growth as a function of anneal time and temperature. The precipitation of nanocrystals was found not to follow the theory for precipitation from a solid solution of Lifshitz-Slezov; nanocrystal growth appears instead to be determined primarily by anneal temperature with little anneal time dependence. This departure from theory is attributed to the high concentration (40 at%) of germanium in the deposited films. A modified log-normal distribution was found to describe the distribution of nanocrystal sizes best. Photoluminescence was observed from nanocrystal-containing films, with luminescence energy shifted from that of bulk germanium. The luminescence spectra are in agreement with the theory of Brus for quantum confined carriers in small semiconductor crystals.",

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T1 - Synthesis of germanium nanocrystals in SiO2

AU - Couillard, J. G.

AU - Craighead, H. G.

PY - 1998

Y1 - 1998

N2 - Germanium nanocrystals in SiO2 with an average diameter of 5-25 nm were fabricated by co-deposition and annealing at 700-1000°C. X-ray diffraction and transmission electron microscopy were used to measure the nanocrystal growth as a function of anneal time and temperature. The precipitation of nanocrystals was found not to follow the theory for precipitation from a solid solution of Lifshitz-Slezov; nanocrystal growth appears instead to be determined primarily by anneal temperature with little anneal time dependence. This departure from theory is attributed to the high concentration (40 at%) of germanium in the deposited films. A modified log-normal distribution was found to describe the distribution of nanocrystal sizes best. Photoluminescence was observed from nanocrystal-containing films, with luminescence energy shifted from that of bulk germanium. The luminescence spectra are in agreement with the theory of Brus for quantum confined carriers in small semiconductor crystals.

AB - Germanium nanocrystals in SiO2 with an average diameter of 5-25 nm were fabricated by co-deposition and annealing at 700-1000°C. X-ray diffraction and transmission electron microscopy were used to measure the nanocrystal growth as a function of anneal time and temperature. The precipitation of nanocrystals was found not to follow the theory for precipitation from a solid solution of Lifshitz-Slezov; nanocrystal growth appears instead to be determined primarily by anneal temperature with little anneal time dependence. This departure from theory is attributed to the high concentration (40 at%) of germanium in the deposited films. A modified log-normal distribution was found to describe the distribution of nanocrystal sizes best. Photoluminescence was observed from nanocrystal-containing films, with luminescence energy shifted from that of bulk germanium. The luminescence spectra are in agreement with the theory of Brus for quantum confined carriers in small semiconductor crystals.

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Synthesis of germanium nanocrystals in SiO₂

Abstract

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