Submicron, vacuum ultraviolet contact lithography with an F2 excimer laser

J. C. White, H. G. Craighead, R. E. Howard, L. D. Jackel, R. E. Behringer, R. W. Epworth, D. Henderson, J. E. Sweeney

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


An F//2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography. At this short wavelength, conventional glass and quartz mask substrates are opaque, and therefore alkaline-earth halides and sapphire were used as mask substrates. The masks were patterned by electron beam lithography, and mask features as narrow as 150 nm have been replicated and represent the smallest features yet produced by contact photolithography.

Original languageEnglish (US)
Pages (from-to)22-24
Number of pages3
JournalApplied Physics Letters
Issue number1
StatePublished - 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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