Submicron, vacuum ultraviolet contact lithography with an F2 excimer laser

J. C. White, H. G. Craighead, R. E. Howard, L. D. Jackel, R. E. Behringer, R. W. Epworth, D. Henderson, J. E. Sweeney

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

An F//2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography. At this short wavelength, conventional glass and quartz mask substrates are opaque, and therefore alkaline-earth halides and sapphire were used as mask substrates. The masks were patterned by electron beam lithography, and mask features as narrow as 150 nm have been replicated and represent the smallest features yet produced by contact photolithography.

Original languageEnglish (US)
Pages (from-to)22-24
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number1
DOIs
StatePublished - 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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