Submicrometer scale growth morphology control for the making of photonic crystal structures

E. Gil-Lafon; A. Trassoudaine; D. Castelluci; A. Pimpinelli; R. Saoudi; O. Parriaux; A. Muravaud; C. Darraud

doi:10.1557/proc-799-z2.3

Submicrometer scale growth morphology control for the making of photonic crystal structures

E. Gil-Lafon, A. Trassoudaine, D. Castelluci, A. Pimpinelli, R. Saoudi, O. Parriaux, A. Muravaud, C. Darraud

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1 μm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.

Original language	English (US)
Pages (from-to)	85-90
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	799
DOIs	https://doi.org/10.1557/proc-799-z2.3
State	Published - 2003
Event	Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications - Boston, MA, United States Duration: Dec 1 2003 → Dec 4 2003

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Submicrometer scale growth morphology control for the making of photonic crystal structures",

abstract = "The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1 μm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.",

author = "E. Gil-Lafon and A. Trassoudaine and D. Castelluci and A. Pimpinelli and R. Saoudi and O. Parriaux and A. Muravaud and C. Darraud",

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doi = "10.1557/proc-799-z2.3",

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T1 - Submicrometer scale growth morphology control for the making of photonic crystal structures

AU - Gil-Lafon, E.

AU - Trassoudaine, A.

AU - Castelluci, D.

AU - Pimpinelli, A.

AU - Saoudi, R.

AU - Parriaux, O.

AU - Muravaud, A.

AU - Darraud, C.

PY - 2003

Y1 - 2003

N2 - The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1 μm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.

AB - The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1 μm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.

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EP - 90

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

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T2 - Progress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications

Y2 - 1 December 2003 through 4 December 2003

ER -

Submicrometer scale growth morphology control for the making of photonic crystal structures

Abstract

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