Submicrometer scale growth morphology control for the making of photonic crystal structures

E. Gil-Lafon, A. Trassoudaine, D. Castelluci, A. Pimpinelli, R. Saoudi, O. Parriaux, A. Muravaud, C. Darraud

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The feasibility of micrometer scale dielectric periodic structures by using a single selective hydride vapour phase epitaxy (HVPE) step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design, thus giving rise to a great flexibility. The HVPE growth is also mainly governed by the intrinsic anisotropy of the surface kinetics of the crystal. We demonstrate here that micrometer scale dielectric periodic structures, constituted of perfectly defined 1 μm wide GaAs beams alternately stacked with air, can be grown by selective HVPE by controlling the hierarchy of the growth rates of the low index faces of the III-V crystal via the growth temperature and the composition of the vapour phase. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.

Original languageEnglish (US)
Pages (from-to)85-90
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume799
DOIs
StatePublished - 2003
EventProgress in Compound Semiconductor Materials III - Electronic and Opoelectronic Applications - Boston, MA, United States
Duration: Dec 1 2003Dec 4 2003

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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