Submicrometer scale growth morphology control: A new route for the making of photonic crystal structures?

E. Gil-Lafon, A. Trassoudaine, D. Castelluci, Alberto Pimpinelli, R. Saoudi, O. Parriaux, A. Muravaud, C. Darraud

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The feasibility of micrometer scale morphologically controlled ID stripe arrays by selective hydride vapour phase epitaxy (HVPE) single step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design thus giving rise to a great flexibility. The HVPE growth being mainly governed by the surface kinetics intrinsic anisotropy of the crystal, we have demonstrated that various growth morphologies could be stabilised at a mesoscopic scale by controlling the hierarchy of the growth rates of the low index faces of III-V crystals via the growth temperature and the composition of the vapour phase. Micrometer scale dielectric periodic structures constituted of 1μm wide GaAs beams alternately stacked with air were then grown by selective HVPE on GaAs substrates. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.

Original languageEnglish (US)
Pages (from-to)452-461
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5250
DOIs
StatePublished - May 3 2004
EventAdvances in Optical Thin Films - St. Etienne, France
Duration: Sep 30 2003Oct 3 2003

Keywords

  • GaAs
  • Photonic crystal
  • Selective vapour phase epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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