Submicrometer scale growth morphology control: A new route for the making of photonic crystal structures?

E. Gil-Lafon; A. Trassoudaine; D. Castelluci; A. Pimpinelli; R. Saoudi; O. Parriaux; A. Muravaud; C. Darraud

doi:10.1117/12.513376

Submicrometer scale growth morphology control: A new route for the making of photonic crystal structures?

E. Gil-Lafon, A. Trassoudaine, D. Castelluci, A. Pimpinelli, R. Saoudi, O. Parriaux, A. Muravaud, C. Darraud

Houston Methodist

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The feasibility of micrometer scale morphologically controlled ID stripe arrays by selective hydride vapour phase epitaxy (HVPE) single step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design thus giving rise to a great flexibility. The HVPE growth being mainly governed by the surface kinetics intrinsic anisotropy of the crystal, we have demonstrated that various growth morphologies could be stabilised at a mesoscopic scale by controlling the hierarchy of the growth rates of the low index faces of III-V crystals via the growth temperature and the composition of the vapour phase. Micrometer scale dielectric periodic structures constituted of 1μm wide GaAs beams alternately stacked with air were then grown by selective HVPE on GaAs substrates. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.

Original language	English (US)
Pages (from-to)	452-461
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5250
DOIs	https://doi.org/10.1117/12.513376
State	Published - 2004
Event	Advances in Optical Thin Films - St. Etienne, France Duration: Sep 30 2003 → Oct 3 2003

Keywords

GaAs
Photonic crystal
Selective vapour phase epitaxy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{b66911ef6b434228a6a6d787126021ed,

title = "Submicrometer scale growth morphology control: A new route for the making of photonic crystal structures?",

abstract = "The feasibility of micrometer scale morphologically controlled ID stripe arrays by selective hydride vapour phase epitaxy (HVPE) single step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design thus giving rise to a great flexibility. The HVPE growth being mainly governed by the surface kinetics intrinsic anisotropy of the crystal, we have demonstrated that various growth morphologies could be stabilised at a mesoscopic scale by controlling the hierarchy of the growth rates of the low index faces of III-V crystals via the growth temperature and the composition of the vapour phase. Micrometer scale dielectric periodic structures constituted of 1μm wide GaAs beams alternately stacked with air were then grown by selective HVPE on GaAs substrates. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.",

keywords = "GaAs, Photonic crystal, Selective vapour phase epitaxy",

author = "E. Gil-Lafon and A. Trassoudaine and D. Castelluci and A. Pimpinelli and R. Saoudi and O. Parriaux and A. Muravaud and C. Darraud",

year = "2004",

doi = "10.1117/12.513376",

language = "English (US)",

volume = "5250",

pages = "452--461",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Advances in Optical Thin Films ; Conference date: 30-09-2003 Through 03-10-2003",

}

TY - JOUR

T1 - Submicrometer scale growth morphology control

T2 - Advances in Optical Thin Films

AU - Gil-Lafon, E.

AU - Trassoudaine, A.

AU - Castelluci, D.

AU - Pimpinelli, A.

AU - Saoudi, R.

AU - Parriaux, O.

AU - Muravaud, A.

AU - Darraud, C.

PY - 2004

Y1 - 2004

N2 - The feasibility of micrometer scale morphologically controlled ID stripe arrays by selective hydride vapour phase epitaxy (HVPE) single step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design thus giving rise to a great flexibility. The HVPE growth being mainly governed by the surface kinetics intrinsic anisotropy of the crystal, we have demonstrated that various growth morphologies could be stabilised at a mesoscopic scale by controlling the hierarchy of the growth rates of the low index faces of III-V crystals via the growth temperature and the composition of the vapour phase. Micrometer scale dielectric periodic structures constituted of 1μm wide GaAs beams alternately stacked with air were then grown by selective HVPE on GaAs substrates. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.

AB - The feasibility of micrometer scale morphologically controlled ID stripe arrays by selective hydride vapour phase epitaxy (HVPE) single step was assessed. HVPE is a near-equilibrium growth process which offers perfect selectivity whatever the pattern design thus giving rise to a great flexibility. The HVPE growth being mainly governed by the surface kinetics intrinsic anisotropy of the crystal, we have demonstrated that various growth morphologies could be stabilised at a mesoscopic scale by controlling the hierarchy of the growth rates of the low index faces of III-V crystals via the growth temperature and the composition of the vapour phase. Micrometer scale dielectric periodic structures constituted of 1μm wide GaAs beams alternately stacked with air were then grown by selective HVPE on GaAs substrates. Potential of the HVPE growth technic for the making of submicrometer scale structures is finally discussed.

KW - GaAs

KW - Photonic crystal

KW - Selective vapour phase epitaxy

UR - http://www.scopus.com/inward/record.url?scp=1942457328&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1942457328&partnerID=8YFLogxK

U2 - 10.1117/12.513376

DO - 10.1117/12.513376

M3 - Conference article

AN - SCOPUS:1942457328

SN - 0277-786X

VL - 5250

SP - 452

EP - 461

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 30 September 2003 through 3 October 2003

ER -

Submicrometer scale growth morphology control: A new route for the making of photonic crystal structures?

Abstract

Keywords

ASJC Scopus subject areas

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