Abstract
A series of strained, AlGalnP quantum well lasers has been fabricated with GaxIn1-xP wells of a fixed width, Lz = 65Å; in which x was varied to give both compressive (x < 0.51) and tensile (x > 0.51) strain. By cooling these lasers to temperatures ∼ 130K we have been able to isolate the intrinsic effects of the strain from the extrinsic changes due to the quantum well structure and we see reductions in threshold current as compressive and tensile strain is applied.
Original language | English (US) |
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Pages (from-to) | 650-659 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 1985 |
DOIs | |
State | Published - 1993 |
Event | Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy Duration: May 23 1993 → May 28 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering