Strained AlGalnP visible emitting quantum well lasers

Huw Summers, P. Blood

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

A series of strained, AlGalnP quantum well lasers has been fabricated with GaxIn1-xP wells of a fixed width, Lz = 65Å; in which x was varied to give both compressive (x < 0.51) and tensile (x > 0.51) strain. By cooling these lasers to temperatures ∼ 130K we have been able to isolate the intrinsic effects of the strain from the extrinsic changes due to the quantum well structure and we see reductions in threshold current as compressive and tensile strain is applied.

Original languageEnglish (US)
Pages (from-to)650-659
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1985
DOIs
StatePublished - Jan 1 1993
EventPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
Duration: May 23 1993May 28 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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