Strained AlGalnP visible emitting quantum well lasers

H. D. Summers; P. Blood

doi:10.1117/12.162800

Strained AlGalnP visible emitting quantum well lasers

H. D. Summers, P. Blood

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A series of strained, AlGalnP quantum well lasers has been fabricated with Ga_xIn_1-xP wells of a fixed width, L_z = 65Å; in which x was varied to give both compressive (x < 0.51) and tensile (x > 0.51) strain. By cooling these lasers to temperatures ∼ 130K we have been able to isolate the intrinsic effects of the strain from the extrinsic changes due to the quantum well structure and we see reductions in threshold current as compressive and tensile strain is applied.

Original language	English (US)
Pages (from-to)	650-659
Number of pages	10
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1985
DOIs	https://doi.org/10.1117/12.162800
State	Published - 1993
Event	Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy Duration: May 23 1993 → May 28 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.162800

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title = "Strained AlGalnP visible emitting quantum well lasers",

abstract = "A series of strained, AlGalnP quantum well lasers has been fabricated with GaxIn1-xP wells of a fixed width, Lz = 65{\AA}; in which x was varied to give both compressive (x < 0.51) and tensile (x > 0.51) strain. By cooling these lasers to temperatures ∼ 130K we have been able to isolate the intrinsic effects of the strain from the extrinsic changes due to the quantum well structure and we see reductions in threshold current as compressive and tensile strain is applied.",

author = "Summers, {H. D.} and P. Blood",

note = "Publisher Copyright: {\textcopyright} 1993 SPIE. All rights reserved.; Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 ; Conference date: 23-05-1993 Through 28-05-1993",

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T1 - Strained AlGalnP visible emitting quantum well lasers

AU - Summers, H. D.

AU - Blood, P.

PY - 1993

Y1 - 1993

N2 - A series of strained, AlGalnP quantum well lasers has been fabricated with GaxIn1-xP wells of a fixed width, Lz = 65Å; in which x was varied to give both compressive (x < 0.51) and tensile (x > 0.51) strain. By cooling these lasers to temperatures ∼ 130K we have been able to isolate the intrinsic effects of the strain from the extrinsic changes due to the quantum well structure and we see reductions in threshold current as compressive and tensile strain is applied.

AB - A series of strained, AlGalnP quantum well lasers has been fabricated with GaxIn1-xP wells of a fixed width, Lz = 65Å; in which x was varied to give both compressive (x < 0.51) and tensile (x > 0.51) strain. By cooling these lasers to temperatures ∼ 130K we have been able to isolate the intrinsic effects of the strain from the extrinsic changes due to the quantum well structure and we see reductions in threshold current as compressive and tensile strain is applied.

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U2 - 10.1117/12.162800

DO - 10.1117/12.162800

M3 - Conference article

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VL - 1985

SP - 650

EP - 659

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Physical Concepts and Materials for Novel Optoelectronic Device Applications II 1993

Y2 - 23 May 1993 through 28 May 1993

ER -

Strained AlGalnP visible emitting quantum well lasers

Abstract

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