Strain effects in (AIyGa1-y)xln1-xP lasers operating at fixed threshold gain

H. D. Summers; P. Blood

doi:10.1049/el:19940168

Strain effects in (AI_yGa_1-y)_xln_1-xP lasers operating at fixed threshold gain

H. D. Summers, P. Blood

Houston Methodist

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The authors have studied the effects of strain in AlGaInP quantum well lasers of a fixed well width of 65A in which the threshold gain remains approximately constant as the amount of strain is varied. The intrinsic threshold current is found to decrease monotonically as both tensile and compressive strain is applied.

Original language	English (US)
Pages (from-to)	236-238
Number of pages	3
Journal	Electronics Letters
Volume	30
Issue number	3
DOIs	https://doi.org/10.1049/el:19940168
State	Published - Jan 1 1994

Keywords

Lasers
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19940168

Cite this

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title = "Strain effects in (AIyGa1-y)xln1-xP lasers operating at fixed threshold gain",

abstract = "The authors have studied the effects of strain in AlGaInP quantum well lasers of a fixed well width of 65A in which the threshold gain remains approximately constant as the amount of strain is varied. The intrinsic threshold current is found to decrease monotonically as both tensile and compressive strain is applied.",

keywords = "Lasers, Semiconductor lasers",

author = "Summers, \{H. D.\} and P. Blood",

year = "1994",

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doi = "10.1049/el:19940168",

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journal = "Electronics Letters",

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AU - Summers, H. D.

AU - Blood, P.

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Y1 - 1994/1/1

N2 - The authors have studied the effects of strain in AlGaInP quantum well lasers of a fixed well width of 65A in which the threshold gain remains approximately constant as the amount of strain is varied. The intrinsic threshold current is found to decrease monotonically as both tensile and compressive strain is applied.

AB - The authors have studied the effects of strain in AlGaInP quantum well lasers of a fixed well width of 65A in which the threshold gain remains approximately constant as the amount of strain is varied. The intrinsic threshold current is found to decrease monotonically as both tensile and compressive strain is applied.

KW - Lasers

KW - Semiconductor lasers

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DO - 10.1049/el:19940168

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VL - 30

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EP - 238

JO - Electronics Letters

JF - Electronics Letters

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