Strain effects in (AIyGa1-y)xln1-xP lasers operating at fixed threshold gain

H. D. Summers, P. Blood

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The authors have studied the effects of strain in AlGaInP quantum well lasers of a fixed well width of 65A in which the threshold gain remains approximately constant as the amount of strain is varied. The intrinsic threshold current is found to decrease monotonically as both tensile and compressive strain is applied.

Original languageEnglish (US)
Pages (from-to)236-238
Number of pages3
JournalElectronics Letters
Volume30
Issue number3
DOIs
StatePublished - Jan 1 1994

Keywords

  • Lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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