The authors have studied the effects of strain in AlGaInP quantum well lasers of a fixed well width of 65A in which the threshold gain remains approximately constant as the amount of strain is varied. The intrinsic threshold current is found to decrease monotonically as both tensile and compressive strain is applied.
|Original language||English (US)|
|Number of pages||3|
|State||Published - Jan 1 1994|
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering