Strain-controlled epitaxial stabilization in ultrathin LaNiO3 films grown by pulsed laser deposition

E. J. Moon, B. A. Gray, Alberto Pimpinelli, M. Kareev, D. Meyers, J. Chakhalian

Research output: Contribution to journalArticle

4 Scopus citations


We report on the epitaxial stabilization effect of strain on the growth of ultrathin heterostructures of a correlated metal LaNiO3 (10 unit cells, ∼3.84 nm; u.c. hereafter) grown on a series of perovskite oxide substrates with both tensile and compressive strain. An unusual polynomial dependence of the activation energy for surface relaxation processes in terms of the lattice misfit was observed. Our experimental investigations further demonstrate the influence of strain relaxation on the self-ordering of complex oxide compounds in the perovskite structure during high supersaturation monolayer (interrupted layer-by-layer) deposition.

Original languageEnglish (US)
Pages (from-to)2256-2259
Number of pages4
JournalCrystal Growth and Design
Issue number6
StatePublished - Jun 5 2013

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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