Skip to main navigation Skip to search Skip to main content

Spontaneous emission measurements of tensile strained GaInP laser diodes

P. M. Smowton, G. M. Lewis, H. D. Summers, J. D. Thomson, P. Blood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A technique which enabled measurement of TE and TM polarised true spontaneous emission spectra of GaInP tensile strained devices, as a function of quasi-fermi level separation was presented. The technique allowed assessment of the affect of strain on significant recombination pathways within the device for a given value of gain requirement. The method, which consisted of collecting the facet emission from a multi-contact device, determined the modal gain and optical loss.

Original languageEnglish
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Pages296-297
Number of pages2
StatePublished - Jan 1 2002
EventConference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States
Duration: May 19 2002May 24 2002

Other

OtherConference on Lasers and Electro-Optics (CLEO 2002)
Country/TerritoryUnited States
CityLong Beach, CA
Period5/19/025/24/02

ASJC Scopus subject areas

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Spontaneous emission measurements of tensile strained GaInP laser diodes'. Together they form a unique fingerprint.

Cite this