Spontaneous emission measurements of tensile strained GaInP laser diodes

P. M. Smowton, G. M. Lewis, H. D. Summers, J. D. Thomson, P. Blood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A technique which enabled measurement of TE and TM polarised true spontaneous emission spectra of GaInP tensile strained devices, as a function of quasi-fermi level separation was presented. The technique allowed assessment of the affect of strain on significant recombination pathways within the device for a given value of gain requirement. The method, which consisted of collecting the facet emission from a multi-contact device, determined the modal gain and optical loss.

Original languageEnglish
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Pages296-297
Number of pages2
StatePublished - Jan 1 2002
EventConference on Lasers and Electro-Optics (CLEO 2002) - Long Beach, CA, United States
Duration: May 19 2002May 24 2002

Other

OtherConference on Lasers and Electro-Optics (CLEO 2002)
CountryUnited States
CityLong Beach, CA
Period5/19/025/24/02

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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