Spontaneous emission control in quantum well laser diodes

H. D. Summers; G. M. Berry; G. W. Lewis; P. Blood

doi:10.1364/OE.2.000151

Spontaneous emission control in quantum well laser diodes

H. D. Summers, G. M. Berry, G. W. Lewis, P. Blood

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Bragg reflectors to define a micro-cavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130K there is an enhancement. These changes to the spontaneous recombination process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the micro-cavity in altering the overlap of the electro-magnetic field with the quantum well dipole oscillators.

Original language	English (US)
Pages (from-to)	151-156
Number of pages	6
Journal	Optics Express
Volume	2
Issue number	4
DOIs	https://doi.org/10.1364/OE.2.000151
State	Published - Feb 1998

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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AB - Spontaneous emission control has been achieved in GaAs/AlGaAs quantum well lasers by the use of Bragg reflectors to define a micro-cavity perpendicular to the quantum wells. The room temperature emission is inhibited whilst below 130K there is an enhancement. These changes to the spontaneous recombination process directly effect the threshold current producing a 25% reduction at room temperature. Theoretical modeling of the lasers is in agreement with the experimental results and highlights the effect of the micro-cavity in altering the overlap of the electro-magnetic field with the quantum well dipole oscillators.

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Spontaneous emission control in quantum well laser diodes

Abstract

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