Spectral analysis of InGaAs/GaAs quantum-dot lasers

P. M. Smowton, E. J. Johnston, S. V. Dewar, P. J. Hulyer, H. D. Summers, A. Patanè, A. Polimeni, M. Henini

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100-400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate.

Original languageEnglish (US)
Pages (from-to)2169-2171
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - Oct 11 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Spectral analysis of InGaAs/GaAs quantum-dot lasers'. Together they form a unique fingerprint.

Cite this