Spectral analysis of InGaAs/GaAs quantum-dot lasers

P. M. Smowton; E. J. Johnston; S. V. Dewar; P. J. Hulyer; H. D. Summers; A. Patanè; A. Polimeni; M. Henini

doi:10.1063/1.124954

Spectral analysis of InGaAs/GaAs quantum-dot lasers

P. M. Smowton, E. J. Johnston, S. V. Dewar, P. J. Hulyer, H. D. Summers, A. Patanè, A. Polimeni, M. Henini

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30 Scopus citations

Abstract

The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100-400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate.

Original language	English (US)
Pages (from-to)	2169-2171
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	15
DOIs	https://doi.org/10.1063/1.124954
State	Published - Oct 11 1999

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Physics and Astronomy (miscellaneous)

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@article{56d3bba1381a4660b69f8509d315a8f7,

title = "Spectral analysis of InGaAs/GaAs quantum-dot lasers",

abstract = "The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100-400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate.",

author = "Smowton, {P. M.} and Johnston, {E. J.} and Dewar, {S. V.} and Hulyer, {P. J.} and Summers, {H. D.} and A. Patan{\`e} and A. Polimeni and M. Henini",

year = "1999",

month = oct,

day = "11",

doi = "10.1063/1.124954",

language = "English (US)",

volume = "75",

pages = "2169--2171",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Spectral analysis of InGaAs/GaAs quantum-dot lasers

AU - Smowton, P. M.

AU - Johnston, E. J.

AU - Dewar, S. V.

AU - Hulyer, P. J.

AU - Summers, H. D.

AU - Patanè, A.

AU - Polimeni, A.

AU - Henini, M.

PY - 1999/10/11

Y1 - 1999/10/11

N2 - The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100-400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate.

AB - The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100-400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate.

UR - http://www.scopus.com/inward/record.url?scp=0000379504&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000379504&partnerID=8YFLogxK

U2 - 10.1063/1.124954

DO - 10.1063/1.124954

M3 - Article

AN - SCOPUS:0000379504

VL - 75

SP - 2169

EP - 2171

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -

Spectral analysis of InGaAs/GaAs quantum-dot lasers

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