Spatially and spectrally resolved measurement of optical loss in InGaN laser structures

H. D. Summers, P. M. Smowton, P. Blood, M. Dineen, R. M. Perks, D. P. Bour, M. Kneissel

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

The optical loss co-efficient in InGaN laser diodes, emitting at ∼410 nm, has been measured. The measurement technique is based on the transmission of internally generated spontaneous emission through varying lengths of the laser waveguide. It is unique in that it provides spectral and spatial information on the optical loss. The lasers studied are typical of InGaN structures showing a high degree of waveguide loss, αi = 40 cm-1. The measurements also show clear evidence of higher order transverse modes in the direction perpendicular to the growth plane with resonant leakage of the optical field into the outer layers of the structure. This produces a modulation in the loss of these modes.

Original languageEnglish (US)
Pages (from-to)517-521
Number of pages5
JournalJournal of Crystal Growth
Volume230
Issue number3-4
DOIs
StatePublished - Sep 1 2001

Keywords

  • A3. Quantum wells
  • B1. Nitrides
  • B3. Laser diodes

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Spatially and spectrally resolved measurement of optical loss in InGaN laser structures'. Together they form a unique fingerprint.

Cite this