Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor

Haiqing Liu; Christian H. Reccius; H. G. Craighead

doi:10.1063/1.2149980

Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor

Haiqing Liu, Christian H. Reccius, H. G. Craighead

Houston Methodist

Research output: Contribution to journal › Article › peer-review

161 Scopus citations

Abstract

We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100-500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2 Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm2 V s in the saturation regime, and a current on/off ratio of 103 in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.

Original language	English (US)
Article number	253106
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	25
DOIs	https://doi.org/10.1063/1.2149980
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2149980

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title = "Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor",

abstract = "We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100-500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2 Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm2 V s in the saturation regime, and a current on/off ratio of 103 in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.",

author = "Haiqing Liu and Reccius, \{Christian H.\} and Craighead, \{H. G.\}",

note = "Funding Information: This work was supported by the Nanobiotechnology Center (NBTC), a STC Program of the National Science Foundation under Agreement No. ECS-9876771. The photolithography was performed at the Cornell Nano-Scale Science \& Technology Facility (a member of the National Nanofabrication Users Network). The authors acknowledge the Cornell Center for Nanoscale Systems for use of the probe station facilities.",

year = "2005",

doi = "10.1063/1.2149980",

language = "English (US)",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor

AU - Liu, Haiqing

AU - Reccius, Christian H.

AU - Craighead, H. G.

N1 - Funding Information: This work was supported by the Nanobiotechnology Center (NBTC), a STC Program of the National Science Foundation under Agreement No. ECS-9876771. The photolithography was performed at the Cornell Nano-Scale Science & Technology Facility (a member of the National Nanofabrication Users Network). The authors acknowledge the Cornell Center for Nanoscale Systems for use of the probe station facilities.

PY - 2005

Y1 - 2005

N2 - We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100-500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2 Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm2 V s in the saturation regime, and a current on/off ratio of 103 in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.

AB - We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100-500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2 Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm2 V s in the saturation regime, and a current on/off ratio of 103 in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.

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Single electrospun regioregular poly(3-hexylthiophene) nanofiber field-effect transistor

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