We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100-500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2 Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm2 V s in the saturation regime, and a current on/off ratio of 103 in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 2005|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)