Abstract
We report on a single nanofiber field-effect transistor made from electrospun regioregular poly(3-hexylthiophene). Nanofibers, with diameters of 100-500 nm, were deposited by electrospinning from chloroform solution onto electrodes on a SiO2 Si substrate. The transistor exhibited a hole field-effect mobility of 0.03 cm2 V s in the saturation regime, and a current on/off ratio of 103 in the accumulation mode. Electrospinning offers a simple means of fabricating one-dimensional polymer transistors.
Original language | English (US) |
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Article number | 253106 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 25 |
DOIs | |
State | Published - 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)