Abstract
In this paper, we will discuss the necessary properties of the light source needed for high resolution and high penetration OCT. We examine the performance of a self pulsating edge emitting quantum dot laser diode light source emitting at -1050nm and configured as a split contact device with separate gain and absorber sections. The device can be configured to operate with a reverse biased saturable absorber section or with the whole device forward biased into gain. With the device operated without a saturable absorber section the laser emits a number of discrete narrow modes, which merge to form a broad continuous lasing spectrum (width up to 10nm) on application of the saturable absorber. In the time domain we observe continuous emission that becomes self pulsation, with pulse widths of 200-300ps and frequency of 0.6-1.5GHz depending on drive current and reverse bias, on application of the saturable absorber.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 7230 |
| DOIs | |
| State | Published - 2009 |
| Event | Novel In-Plane Semiconductor Lasers VIII - San Jose, CA, United States Duration: Jan 26 2009 → Jan 29 2009 |
Other
| Other | Novel In-Plane Semiconductor Lasers VIII |
|---|---|
| Country/Territory | United States |
| City | San Jose, CA |
| Period | 1/26/09 → 1/29/09 |
Keywords
- Broadband laser diode
- Optical coherence tomography
- Quantum dots
- Saturable absorber
- Self- pulsation
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics