Self-developing photoresist using a vacuum ultraviolet F2 excimer laser exposure

D. Henderson; J. C. White; H. G. Craighead; I. Adesida

doi:10.1063/1.95881

Self-developing photoresist using a vacuum ultraviolet F₂ excimer laser exposure

D. Henderson, J. C. White, H. G. Craighead, I. Adesida

Houston Methodist

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

An F₂ excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm². Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.

Original language	English (US)
Pages (from-to)	900-902
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	9
DOIs	https://doi.org/10.1063/1.95881
State	Published - 1985

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "An F2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm2. Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.",

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year = "1985",

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AU - Henderson, D.

AU - White, J. C.

AU - Craighead, H. G.

AU - Adesida, I.

PY - 1985

Y1 - 1985

N2 - An F2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm2. Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.

AB - An F2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm2. Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.

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ER -

Self-developing photoresist using a vacuum ultraviolet F₂ excimer laser exposure

Abstract

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