Self-assembled monolayer electron beam resist on GaAs

R. C. Tiberio; H. G. Craighead; M. Lercel; T. Lau; C. W. Sheen; D. L. Allara

doi:10.1063/1.108938

Self-assembled monolayer electron beam resist on GaAs

R. C. Tiberio, H. G. Craighead, M. Lercel, T. Lau, C. W. Sheen, D. L. Allara

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140 Scopus citations

Abstract

We present results on electron beam exposure of a self-assembled monolayer film as a self-developing positive resist on GaAs. A 1.5 nm thick monolayer of n-octadecanethiol (C₁₈H₃₇SH) deposited on a GaAs (100) substrate showed an electron beam sensitivity of about 100 μC/cm². The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.

Original language	English (US)
Pages (from-to)	476-478
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	5
DOIs	https://doi.org/10.1063/1.108938
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We present results on electron beam exposure of a self-assembled monolayer film as a self-developing positive resist on GaAs. A 1.5 nm thick monolayer of n-octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed an electron beam sensitivity of about 100 μC/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.",

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T1 - Self-assembled monolayer electron beam resist on GaAs

AU - Tiberio, R. C.

AU - Craighead, H. G.

AU - Lercel, M.

AU - Lau, T.

AU - Sheen, C. W.

AU - Allara, D. L.

PY - 1993

Y1 - 1993

N2 - We present results on electron beam exposure of a self-assembled monolayer film as a self-developing positive resist on GaAs. A 1.5 nm thick monolayer of n-octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed an electron beam sensitivity of about 100 μC/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.

AB - We present results on electron beam exposure of a self-assembled monolayer film as a self-developing positive resist on GaAs. A 1.5 nm thick monolayer of n-octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed an electron beam sensitivity of about 100 μC/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.

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