Self-assembled monolayer electron beam resist on GaAs

R. C. Tiberio, H. G. Craighead, M. Lercel, T. Lau, C. W. Sheen, D. L. Allara

Research output: Contribution to journalArticle

140 Scopus citations

Abstract

We present results on electron beam exposure of a self-assembled monolayer film as a self-developing positive resist on GaAs. A 1.5 nm thick monolayer of n-octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed an electron beam sensitivity of about 100 μC/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.

Original languageEnglish (US)
Pages (from-to)476-478
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number5
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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