Abstract
We present results on electron beam exposure of a self-assembled monolayer film as a self-developing positive resist on GaAs. A 1.5 nm thick monolayer of n-octadecanethiol (C18H37SH) deposited on a GaAs (100) substrate showed an electron beam sensitivity of about 100 μC/cm2. The monolayer resist was used as a mask for chemical etching of the GaAs. Patterns in GaAs have been created with widths approximately equal to the exposing electron beam width of 50 nm.
Original language | English (US) |
---|---|
Pages (from-to) | 476-478 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 62 |
Issue number | 5 |
DOIs | |
State | Published - 1993 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)