TY - JOUR
T1 - Selective growth of GaAs by HVPE
T2 - Keys for accurate control of the growth morphologies
AU - Gil-Lafon, E.
AU - Napierala, J.
AU - Castelluci, D.
AU - Pimpinelli, A.
AU - Cadoret, R.
AU - Gérard, B.
N1 - Funding Information:
This work has been supported by the European Commission through the BRITE-EURAM project no. 4071 CONFORM.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2001/1
Y1 - 2001/1
N2 - GaAs selective growth experiments were carried out on (0 0 1) GaAs-patterned substrates by HVPE. Mesas grown on [1 1 0] and [1 1̄ 0] oriented stripes exhibited various morphological profiles bounded by the low growth rate faces (0 0 1), (1 1 0), (1 1 1)A and (1 1 1)B, depending on the III/V ratio in the vapour phase, on the supersaturation and the growth temperature. The shape of the mesas results from the hierarchy of the growth rates of the low index faces. The latter growth rates were independently determined on un-masked substrates. Kinetic Wulff constructions were then built by referring to these growth rates. A good agreement was obtained between the morphologies of the selectively grown mesas and the constructions built from the only knowledge of the growth rate anisotropy, demonstrating that HVPE growth is mainly governed by surface kinetics. Qualitative growth mechanisms involving As and GaCl net adsorption fluxes as well as chlorine desorption kinetics are proposed for the various low index faces.
AB - GaAs selective growth experiments were carried out on (0 0 1) GaAs-patterned substrates by HVPE. Mesas grown on [1 1 0] and [1 1̄ 0] oriented stripes exhibited various morphological profiles bounded by the low growth rate faces (0 0 1), (1 1 0), (1 1 1)A and (1 1 1)B, depending on the III/V ratio in the vapour phase, on the supersaturation and the growth temperature. The shape of the mesas results from the hierarchy of the growth rates of the low index faces. The latter growth rates were independently determined on un-masked substrates. Kinetic Wulff constructions were then built by referring to these growth rates. A good agreement was obtained between the morphologies of the selectively grown mesas and the constructions built from the only knowledge of the growth rate anisotropy, demonstrating that HVPE growth is mainly governed by surface kinetics. Qualitative growth mechanisms involving As and GaCl net adsorption fluxes as well as chlorine desorption kinetics are proposed for the various low index faces.
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U2 - 10.1016/S0022-0248(00)00961-1
DO - 10.1016/S0022-0248(00)00961-1
M3 - Article
AN - SCOPUS:0035151543
VL - 222
SP - 482
EP - 496
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3
ER -