Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures

Keyphrases

• Luminescence 100%
• Scanning Tunneling Microscope Induced Luminescence 100%
• Luminescence Studies 100%
• GaN Layers 100%
• GaN Heterostructure 100%
• Quantum Well 50%
• Low Temperature 50%
• Indium Gallium Nitride (InGaN) 50%
• Nanometer Scale 50%
• GaAs Quantum Dot 50%
• Multiple Quantum Wells 50%
• Cross-sectional Image 50%
• InGaAs 50%
• Smooth Fluctuations 50%
• Threading Dislocation 50%
• Hole Diffusion Length 50%
• Dark Zone 50%
• Optoelectronic Materials 50%

Material Science

• Luminescence 100%
• Heterojunction 100%
• Quantum Well 50%
• Gallium Arsenide 25%
• Quantum Dot 25%
• Indium Gallium Arsenide 25%

Physics

• Scanning Tunneling Microscope 100%
• Quantum Dot 50%
• Quantum Wells 50%
• Multiple Quantum Well 50%
• Optoelectronics 50%