Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures

S. Evoy; C. K. Harnett; S. Keller; U. K. Mishra; S. P. DenBaars; Harold G. Craighead

Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures

S. Evoy, C. K. Harnett, S. Keller, U. K. Mishra, S. P. DenBaars, Harold G. Craighead

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of L _d=30-55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30-100 nm wide smooth fluctuations of luminescence.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	19-24
Number of pages	6
Volume	588
State	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' - Boston, MA, USA Duration: Nov 29 1999 → Nov 30 1999

Other

Other	The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors'
City	Boston, MA, USA
Period	11/29/99 → 11/30/99

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Evoy, S, Harnett, CK, Keller, S, Mishra, UK, DenBaars, SP & Craighead, HG 2000, Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures. in Materials Research Society Symposium - Proceedings. vol. 588, Materials Research Society, pp. 19-24, The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors', Boston, MA, USA, 11/29/99.

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title = "Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures",

abstract = "We present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of L d=30-55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30-100 nm wide smooth fluctuations of luminescence. ",

author = "S. Evoy and Harnett, {C. K.} and S. Keller and Mishra, {U. K.} and DenBaars, {S. P.} and Craighead, {Harold G.}",

year = "2000",

language = "English (US)",

volume = "588",

pages = "19--24",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

address = "United States",

note = "The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' ; Conference date: 29-11-1999 Through 30-11-1999",

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TY - GEN

T1 - Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures

AU - Evoy, S.

AU - Harnett, C. K.

AU - Keller, S.

AU - Mishra, U. K.

AU - DenBaars, S. P.

AU - Craighead, Harold G.

PY - 2000

Y1 - 2000

N2 - We present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of L d=30-55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30-100 nm wide smooth fluctuations of luminescence.

AB - We present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of L d=30-55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30-100 nm wide smooth fluctuations of luminescence.

UR - http://www.scopus.com/inward/record.url?scp=0033705825&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033705825&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033705825

VL - 588

SP - 19

EP - 24

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors'

Y2 - 29 November 1999 through 30 November 1999

ER -

Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures

Abstract

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ASJC Scopus subject areas

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