Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures

S. Evoy, C. K. Harnett, S. Keller, U. K. Mishra, S. P. DenBaars, Harold G. Craighead

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We present the scanning tunneling microscope-induced luminescence (STL) imaging of defects in optoelectronic materials. Resolution is first discussed using cross-sectional images of InGaAs/GaAs quantum dots. Proof of concept is then provided through the nanometer-scale imaging of GaN layers and quantum wells. The expected λ=356±25 nm range dominates the low temperature STL of GaN. Mapping of luminescence shows circular non-emitting areas around threading dislocations. Extent of dark areas suggests a hole diffusion length of L d=30-55 nm, in agreement with reported values. The expected λ=450±35 nm range dominates the STL from a buried InGaN/GaN multiple quantum well. Imaging reveals 30-100 nm wide smooth fluctuations of luminescence.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages19-24
Number of pages6
Volume588
StatePublished - 2000
EventThe 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' - Boston, MA, USA
Duration: Nov 29 1999Nov 30 1999

Other

OtherThe 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors'
CityBoston, MA, USA
Period11/29/9911/30/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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