Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy

S. Evoy; Harold G. Craighead; W. A. Davis; T. J. Eustis; W. J. Schaff; L. F. Eastman

Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy

S. Evoy, Harold G. Craighead, W. A. Davis, T. J. Eustis, W. J. Schaff, L. F. Eastman

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The scanning tunneling microscopy-induced luminescence (STL) and scanning electron microscopy-induced cathodoluminescence (SEM-CL) of gallium nitride, and the effect of sulfur treatment on luminescence efficiency were studied. The GaN film was grown in air by molecular beam epitaxy. Topographic images which exhibited submicrometer features observed from STL agreed well with SEM-CL. Sodium sulfide passivation of GaN showed an increase in luminescence efficiency due to the presence of sulfur.

Original language	English (US)
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Editors	Anon
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	110
Number of pages	1
Volume	11
State	Published - 1997
Event	Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: May 18 1997 → May 23 1997

Other

Other	Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO
City	Baltimore, MD, USA
Period	5/18/97 → 5/23/97

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Cite this

Evoy, S., Craighead, H. G., Davis, W. A., Eustis, T. J., Schaff, W. J., & Eastman, L. F. (1997). Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy. In Anon (Ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 11, pp. 110). Institute of Electrical and Electronics Engineers Inc..

Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy. / Evoy, S.; Craighead, Harold G.; Davis, W. A. et al.
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. ed. / Anon. Vol. 11 Institute of Electrical and Electronics Engineers Inc., 1997. p. 110.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Evoy, S, Craighead, HG, Davis, WA, Eustis, TJ, Schaff, WJ & Eastman, LF 1997, Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy. in Anon (ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 11, Institute of Electrical and Electronics Engineers Inc., pp. 110, Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO, Baltimore, MD, USA, 5/18/97.

Evoy S, Craighead HG, Davis WA, Eustis TJ, Schaff WJ, Eastman LF. Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy. In Anon, editor, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 11. Institute of Electrical and Electronics Engineers Inc. 1997. p. 110

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abstract = "The scanning tunneling microscopy-induced luminescence (STL) and scanning electron microscopy-induced cathodoluminescence (SEM-CL) of gallium nitride, and the effect of sulfur treatment on luminescence efficiency were studied. The GaN film was grown in air by molecular beam epitaxy. Topographic images which exhibited submicrometer features observed from STL agreed well with SEM-CL. Sodium sulfide passivation of GaN showed an increase in luminescence efficiency due to the presence of sulfur.",

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AU - Eustis, T. J.

AU - Schaff, W. J.

AU - Eastman, L. F.

PY - 1997

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N2 - The scanning tunneling microscopy-induced luminescence (STL) and scanning electron microscopy-induced cathodoluminescence (SEM-CL) of gallium nitride, and the effect of sulfur treatment on luminescence efficiency were studied. The GaN film was grown in air by molecular beam epitaxy. Topographic images which exhibited submicrometer features observed from STL agreed well with SEM-CL. Sodium sulfide passivation of GaN showed an increase in luminescence efficiency due to the presence of sulfur.

AB - The scanning tunneling microscopy-induced luminescence (STL) and scanning electron microscopy-induced cathodoluminescence (SEM-CL) of gallium nitride, and the effect of sulfur treatment on luminescence efficiency were studied. The GaN film was grown in air by molecular beam epitaxy. Topographic images which exhibited submicrometer features observed from STL agreed well with SEM-CL. Sodium sulfide passivation of GaN showed an increase in luminescence efficiency due to the presence of sulfur.

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Y2 - 18 May 1997 through 23 May 1997

ER -

Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy

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