Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy

S. Evoy, Harold G. Craighead, W. A. Davis, T. J. Eustis, W. J. Schaff, L. F. Eastman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The scanning tunneling microscopy-induced luminescence (STL) and scanning electron microscopy-induced cathodoluminescence (SEM-CL) of gallium nitride, and the effect of sulfur treatment on luminescence efficiency were studied. The GaN film was grown in air by molecular beam epitaxy. Topographic images which exhibited submicrometer features observed from STL agreed well with SEM-CL. Sodium sulfide passivation of GaN showed an increase in luminescence efficiency due to the presence of sulfur.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Editors Anon
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages110
Number of pages1
Volume11
StatePublished - 1997
EventProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

Other

OtherProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO
CityBaltimore, MD, USA
Period5/18/975/23/97

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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