Saturable absorber characteristics in quantum dot lasers

Daniel R. Matthews, Gareth T. Edwards, Huw D. Summers, Peter M. Smowton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A full evaluation of the performance of InGaAs quantum dots as saturable absorbers in multi-contact lasers emitting at a wavelength of 1 μm has been carried out. The light-current curves of the two-section quantum dot laser have been measured at 300K with varying levels of reverse bias applied to the absorber section and are compared with a quantum well control sample. This measurement indicates that the quantum confined stark effect (QCSE) is very different for the quantum dots, and this is confirmed by measurements of differential loss spectra as a function of reverse bias. Up to voltages of 6V there is no shift in the absorption edge of the quantum dots showing that the QCSE is weak for this OD system. Dynamic measurements show that self-pulsation in these lasers is highly temperature dependent, and completely ceases below 150K. We have also measured the absorber recovery time, which is found to increase from 40ps at 300K to 600ps at 50K, demonstrating that a high loss condition cannot be achieved quickly enough at low temperature for self-pulsation to occur.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsC.F. Gmachl, D.P. Bour
Pages96-106
Number of pages11
Volume5365
DOIs
StatePublished - 2004
EventNovel In-Plane Semiconductor Lasers III - San Jose, CA, United States
Duration: Jan 26 2004Jan 28 2004

Other

OtherNovel In-Plane Semiconductor Lasers III
CountryUnited States
CitySan Jose, CA
Period1/26/041/28/04

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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