Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers

H. D. Summers; P. Blood

doi:10.1049/el:19930672

Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers

H. D. Summers, P. Blood

Houston Methodist

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Abstract

Double quantum well, tensile strained AlGaInP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density J_th on cavity length and temperature has been investigated and a pulsed J_th of 2.15 kA cm^-2 obtained for a 750 μm long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.

Original language	English (US)
Pages (from-to)	1007-1008
Number of pages	2
Journal	Electronics Letters
Volume	29
Issue number	11
DOIs	https://doi.org/10.1049/el:19930672
State	Published - May 1993

Keywords

Lasers
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19930672

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title = "Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers",

abstract = "Double quantum well, tensile strained AlGaInP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density Jth on cavity length and temperature has been investigated and a pulsed Jth of 2.15 kA cm-2 obtained for a 750 μm long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.",

keywords = "Lasers, Semiconductor lasers",

author = "Summers, \{H. D.\} and P. Blood",

year = "1993",

month = may,

doi = "10.1049/el:19930672",

language = "English (US)",

volume = "29",

pages = "1007--1008",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "11",

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T1 - Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers

AU - Summers, H. D.

AU - Blood, P.

PY - 1993/5

Y1 - 1993/5

N2 - Double quantum well, tensile strained AlGaInP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density Jth on cavity length and temperature has been investigated and a pulsed Jth of 2.15 kA cm-2 obtained for a 750 μm long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.

AB - Double quantum well, tensile strained AlGaInP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density Jth on cavity length and temperature has been investigated and a pulsed Jth of 2.15 kA cm-2 obtained for a 750 μm long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.

KW - Lasers

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0027588909

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U2 - 10.1049/el:19930672

DO - 10.1049/el:19930672

M3 - Article

AN - SCOPUS:0027588909

SN - 0013-5194

VL - 29

SP - 1007

EP - 1008

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers

Abstract

Keywords

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