Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers

H. D. Summers, P. Blood

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

Double quantum well, tensile strained AlGaInP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density Jth on cavity length and temperature has been investigated and a pulsed Jth of 2.15 kA cm-2 obtained for a 750 μm long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.

Original languageEnglish (US)
Pages (from-to)1007-1008
Number of pages2
JournalElectronics Letters
Volume29
Issue number11
DOIs
StatePublished - May 1993

Keywords

  • Lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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