Abstract
Double quantum well, tensile strained AlGaInP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density Jth on cavity length and temperature has been investigated and a pulsed Jth of 2.15 kA cm-2 obtained for a 750 μm long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.
Original language | English (US) |
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Pages (from-to) | 1007-1008 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 29 |
Issue number | 11 |
DOIs | |
State | Published - May 1993 |
Keywords
- Lasers
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering