Role of device structure on the performance of quantum dot lasers

D. S. Naidu; M. Mexis; A. Sobiesierski; P. M. Smowton; H. D. Summers; D. J. Mowbray; H. Y. Liu; M. Hopkinson

doi:10.1109/LEOS.2007.4382465

Role of device structure on the performance of quantum dot lasers

D. S. Naidu, M. Mexis, A. Sobiesierski, P. M. Smowton, H. D. Summers, D. J. Mowbray, H. Y. Liu, M. Hopkinson

Houston Methodist

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Measurements of the confinement factor, internal loss, diffusion length and sidewall recombination, using special test structures and a new measurement method, explain the large differences in threshold current density of broad area and ridge lasers of different width.

Original language	English (US)
Title of host publication	LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings
Pages	435-436
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2007.4382465
State	Published - Dec 1 2007
Event	20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS - Lake Buena Vista, FL, United States Duration: Oct 21 2007 → Oct 25 2007

Other

Other	20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
Country/Territory	United States
City	Lake Buena Vista, FL
Period	10/21/07 → 10/25/07

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LEOS.2007.4382465

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Naidu, DS, Mexis, M, Sobiesierski, A, Smowton, PM, Summers, HD, Mowbray, DJ, Liu, HY & Hopkinson, M 2007, Role of device structure on the performance of quantum dot lasers. in LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings., 4382465, pp. 435-436, 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS, Lake Buena Vista, FL, United States, 10/21/07. https://doi.org/10.1109/LEOS.2007.4382465

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author = "Naidu, {D. S.} and M. Mexis and A. Sobiesierski and Smowton, {P. M.} and Summers, {H. D.} and Mowbray, {D. J.} and Liu, {H. Y.} and M. Hopkinson",

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doi = "10.1109/LEOS.2007.4382465",

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T1 - Role of device structure on the performance of quantum dot lasers

AU - Naidu, D. S.

AU - Mexis, M.

AU - Sobiesierski, A.

AU - Smowton, P. M.

AU - Summers, H. D.

AU - Mowbray, D. J.

AU - Liu, H. Y.

AU - Hopkinson, M.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Measurements of the confinement factor, internal loss, diffusion length and sidewall recombination, using special test structures and a new measurement method, explain the large differences in threshold current density of broad area and ridge lasers of different width.

AB - Measurements of the confinement factor, internal loss, diffusion length and sidewall recombination, using special test structures and a new measurement method, explain the large differences in threshold current density of broad area and ridge lasers of different width.

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M3 - Conference contribution

AN - SCOPUS:51249117360

SN - 142440925X

SN - 9781424409259

SP - 435

EP - 436

BT - LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings

T2 - 20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS

Y2 - 21 October 2007 through 25 October 2007

ER -

Role of device structure on the performance of quantum dot lasers

Abstract

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ASJC Scopus subject areas

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