Role of device structure on the performance of quantum dot lasers

D. S. Naidu, M. Mexis, A. Sobiesierski, P. M. Smowton, H. D. Summers, D. J. Mowbray, H. Y. Liu, M. Hopkinson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Measurements of the confinement factor, internal loss, diffusion length and sidewall recombination, using special test structures and a new measurement method, explain the large differences in threshold current density of broad area and ridge lasers of different width.

Original languageEnglish (US)
Title of host publicationLEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings
Pages435-436
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS - Lake Buena Vista, FL, United States
Duration: Oct 21 2007Oct 25 2007

Other

Other20th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS
CountryUnited States
CityLake Buena Vista, FL
Period10/21/0710/25/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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