Abstract
A method to integrate micromechanical frequency-determining elements along with the corresponding electromechanical transducers into a poly or single-crystal silicon film layer is demonstrated. A resistor dissipating several microwatt of power induces high-frequency resonant mechanical motion in a shallow-shell membrane. Transduction from the mechanical to the electrical domain is performed using implanted piezoresistors, which are sensitive to strain produced by resonant motion. Self-sustained oscillations at 10 MHz are demonstrated when the device is directly coupled to a high-impedance operational amplifier and a positive feedback loop. Finally, this letter discuss how the resonator and transducers may be incorporated into standard integrated-circuit technology.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 805-807 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 27 |
| Issue number | 10 |
| DOIs | |
| State | Published - 2006 |
Keywords
- CMOS integrated circuits
- Microelectromechanical devices
- Oscillators
- Resistance heating
- Resonators
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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