TY - JOUR
T1 - Resonant-cavity optoelectronic devices for fluorimetry
AU - Summers, Huw D.
AU - Porta, Pierpaolo A.
N1 - Funding Information:
Manuscript received December 17, 2004; revised October 17, 2005. This work was supported by the EPSRC, U.K., and the Welcome Trust under Grant 72640/Z/03. The authors are with the School of Physics and Astronomy, Cardiff University, Cardiff, U.K. CF24 3YB (e-mail: [email protected]; [email protected]). Digital Object Identifier 10.1109/JSTQE.2005.857740
Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2005/7
Y1 - 2005/7
N2 - Vertical cavity, semiconductor optoelectronic devices have been designed specifically for applications in fluorescence spectroscopy. The devices emit and detect light in a direction normal to their surface and could be readily integrated into lab-on-a-chip formats with extremely close proximity coupling to the analyte. The emission is narrow band and centered at 645 nm, whereas the detection response is broadband extending from 645 to 870 nm. A resonant cavity structure has been used to independently control the emission and detection characteristics, and a comparison is given between structures with a cavity enhancement at either the emission or the detection wavelength. In both cases, an enhancement by a factor of greater than 15 is achieved due to the presence of the optical cavity. In emission, this provides micrometer-scale devices with power levels in the 50-μW range. When the cavity is used to enhance detection, a minimum detection power level of 100 nW is achieved.
AB - Vertical cavity, semiconductor optoelectronic devices have been designed specifically for applications in fluorescence spectroscopy. The devices emit and detect light in a direction normal to their surface and could be readily integrated into lab-on-a-chip formats with extremely close proximity coupling to the analyte. The emission is narrow band and centered at 645 nm, whereas the detection response is broadband extending from 645 to 870 nm. A resonant cavity structure has been used to independently control the emission and detection characteristics, and a comparison is given between structures with a cavity enhancement at either the emission or the detection wavelength. In both cases, an enhancement by a factor of greater than 15 is achieved due to the presence of the optical cavity. In emission, this provides micrometer-scale devices with power levels in the 50-μW range. When the cavity is used to enhance detection, a minimum detection power level of 100 nW is achieved.
KW - Fluorescence spectroscopy
KW - Light-emitting diodes (LEDs)
KW - Photodetectors
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U2 - 10.1109/JSTQE.2005.857740
DO - 10.1109/JSTQE.2005.857740
M3 - Article
AN - SCOPUS:29144504479
SN - 1077-260X
VL - 11
SP - 854
EP - 857
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
IS - 4
ER -