Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers

Huw Summers; I. H. White; Paul Rees; P. Blood

Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers

Huw Summers, I. H. White, Paul Rees, P. Blood

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This is the first reported analysis, from first principles the physical mechanisms responsible for the reduction of the α-parameter in strained layer lasers as a result of using quantum well structures. α-values of approx.2 in 1% compressively strained lasers operating d.c. and under modulation conditions were measured. It will be determined from the results obtained whether the use of strain result to an apparent reduction of α-values under cw and dynamic conditions.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Place of Publication	Piscataway, NJ, United States
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	398-399
Number of pages	2
State	Published - Dec 1 1994
Event	Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe - Amsterdam, Neth Duration: Aug 28 1994 → Sep 2 1994

Other

Other	Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe
City	Amsterdam, Neth
Period	8/28/94 → 9/2/94

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

Fingerprint Dive into the research topics of 'Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers'. Together they form a unique fingerprint.

Cite this

Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers. / Summers, Huw; White, I. H.; Rees, Paul; Blood, P.

Conference on Lasers and Electro-Optics Europe - Technical Digest. Piscataway, NJ, United States : Institute of Electrical and Electronics Engineers Inc., 1994. p. 398-399.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Summers, H, White, IH, Rees, P & Blood, P 1994, Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers. in Conference on Lasers and Electro-Optics Europe - Technical Digest. Institute of Electrical and Electronics Engineers Inc., Piscataway, NJ, United States, pp. 398-399, Proceedings of the 1994 Conference on Lasers and Electro-Optics Europe, Amsterdam, Neth, 8/28/94.

@inproceedings{220d1e17c44a4b61adc5a6e984f99359,

title = "Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers",

abstract = "This is the first reported analysis, from first principles the physical mechanisms responsible for the reduction of the α-parameter in strained layer lasers as a result of using quantum well structures. α-values of approx.2 in 1% compressively strained lasers operating d.c. and under modulation conditions were measured. It will be determined from the results obtained whether the use of strain result to an apparent reduction of α-values under cw and dynamic conditions.",

author = "Huw Summers and White, {I. H.} and Paul Rees and P. Blood",

year = "1994",

month = dec,

day = "1",

language = "English",

pages = "398--399",

booktitle = "Conference on Lasers and Electro-Optics Europe - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "null ; Conference date: 28-08-1994 Through 02-09-1994",

}

TY - GEN

T1 - Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers

AU - Summers, Huw

AU - White, I. H.

AU - Rees, Paul

AU - Blood, P.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - This is the first reported analysis, from first principles the physical mechanisms responsible for the reduction of the α-parameter in strained layer lasers as a result of using quantum well structures. α-values of approx.2 in 1% compressively strained lasers operating d.c. and under modulation conditions were measured. It will be determined from the results obtained whether the use of strain result to an apparent reduction of α-values under cw and dynamic conditions.

AB - This is the first reported analysis, from first principles the physical mechanisms responsible for the reduction of the α-parameter in strained layer lasers as a result of using quantum well structures. α-values of approx.2 in 1% compressively strained lasers operating d.c. and under modulation conditions were measured. It will be determined from the results obtained whether the use of strain result to an apparent reduction of α-values under cw and dynamic conditions.

UR - http://www.scopus.com/inward/record.url?scp=0028581188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028581188&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028581188

SP - 398

EP - 399

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

PB - Institute of Electrical and Electronics Engineers Inc.

CY - Piscataway, NJ, United States

Y2 - 28 August 1994 through 2 September 1994

ER -