Reduction of linewidth enhancement factor in strained 1.55-μm InGaAsP lasers

Huw Summers, I. H. White, Paul Rees, P. Blood

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This is the first reported analysis, from first principles the physical mechanisms responsible for the reduction of the α-parameter in strained layer lasers as a result of using quantum well structures. α-values of approx.2 in 1% compressively strained lasers operating d.c. and under modulation conditions were measured. It will be determined from the results obtained whether the use of strain result to an apparent reduction of α-values under cw and dynamic conditions.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
Place of PublicationPiscataway, NJ, United States
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages398-399
Number of pages2
StatePublished - Dec 1 1994
EventProceedings of the 1994 Conference on Lasers and Electro-Optics Europe - Amsterdam, Neth
Duration: Aug 28 1994Sep 2 1994

Other

OtherProceedings of the 1994 Conference on Lasers and Electro-Optics Europe
CityAmsterdam, Neth
Period8/28/949/2/94

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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